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Dmowski, K., Losson, E., Lepley, B. (1993) A numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities. Review of Scientific Instruments, 64 (9). 2655-2660 doi:10.1063/1.1143886

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Reference TypeJournal (article/letter/editorial)
TitleA numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities
JournalReview of Scientific Instruments
AuthorsDmowski, K.Author
Losson, E.Author
Lepley, B.Author
Year1993 (September)Volume64
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1143886Search in ResearchGate
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Mindat Ref. ID4865997Long-form Identifiermindat:1:5:4865997:2
GUID0
Full ReferenceDmowski, K., Losson, E., Lepley, B. (1993) A numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities. Review of Scientific Instruments, 64 (9). 2655-2660 doi:10.1063/1.1143886
Plain TextDmowski, K., Losson, E., Lepley, B. (1993) A numerical procedure to determine near midgap level defect parameters in Schottky diodes with significant leakage current densities. Review of Scientific Instruments, 64 (9). 2655-2660 doi:10.1063/1.1143886
In(1993, September) Review of Scientific Instruments Vol. 64 (9) AIP Publishing

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Dmowski, K., Lepley, B., Losson, E., Bouabdellati, M. El (1993) A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodes. Journal of Applied Physics, 74 (6). 3936-3943 doi:10.1063/1.354460
Dmowski, K., Lepley, B., Losson, E., Bouabdellati, M. El (1994) Erratum: ā€˜ā€˜A method to correct for leakage current effects in deep level transient spectroscopy measurements on Schottky diodesā€™ā€™ [J. Appl. Phys. 74, 3936 (1993)]. Journal of Applied Physics, 75 (6). 3226 doi:10.1063/1.356130
Dmowski, K., Vuillaume, D., Lepley, B., Losson, E., Bath, A. (1995) Interface state measurements by the DLSā€82E lockā€in spectrometer. Review of Scientific Instruments, 66 (8). 4283-4288 doi:10.1063/1.1145383
Losson, E., Dmowski, K., Lepley, B. (1996) Practical methods to improve DLTS data smoothing. physica status solidi (a), 156 (2). 413-420 doi:10.1002/pssa.2211560219
Dmowski, K., Bethge, K. (1991) Current deepā€level transient spectroscopy in MOS structures with a boxcar integrator and an arbitrary gateā€widthā€data analysis. Review of Scientific Instruments, 62 (4). 1037-1046 doi:10.1063/1.1142055
Day, D. S., Helix, M. J., Hess, K., Streetman, B. G. (1979) Deep level transient spectroscopy for diodes with large leakage currents. Review of Scientific Instruments, 50 (12). 1571-1573 doi:10.1063/1.1135761
Dmowski, K., Vuillaume, D., Lepley, B. (1996) A modified method of side data analysis of deep level transient spectroscopy spectra. Journal of Applied Physics, 79 (3). 1468-1475 doi:10.1063/1.360986
Osvald, J. (2008) Numerical analysis of gate leakage current in AlGaN Schottky diodes. Applied Surface Science, 255. 793-795 doi:10.1016/j.apsusc.2008.07.027
Hosokawa, Yoshihiro, Kobayashi, Kei, Oyabu, Noriaki, Matsushige, Kazumi, Yamada, Hirofumi (2010) A procedure to determine the optimum imaging parameters for atomic/molecular resolution frequency modulation atomic force microscopy. Review of Scientific Instruments, 81 (9). 93701pp. doi:10.1063/1.3477995
Branca, F. P., Del Prete, Z., Marinozzi, F. (1993) New ac microammeter for leakage current measurement of biomedical equipment. Review of Scientific Instruments, 64 (11). 3303-3307 doi:10.1063/1.1144295
Dmowski, K., Jakubowski, A. (1989) Sensitivity analysis of bulk traps detection in analog deepā€level transient spectroscopy measurement systems with exponentially weighted average. Review of Scientific Instruments, 60 (1). 106-112 doi:10.1063/1.1140592
 
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