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Pietsch, U., Metzger, H., Rugel, S., Jenichen, B., Robinson, I. K. (1993) Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction. Journal of Applied Physics, 74 (4). 2381-2387 doi:10.1063/1.354724

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Reference TypeJournal (article/letter/editorial)
TitleDepth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction
JournalJournal of Applied Physics
AuthorsPietsch, U.Author
Metzger, H.Author
Rugel, S.Author
Jenichen, B.Author
Robinson, I. K.Author
Year1993 (August 15)Volume74
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.354724Search in ResearchGate
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Mindat Ref. ID5065319Long-form Identifiermindat:1:5:5065319:3
GUID0
Full ReferencePietsch, U., Metzger, H., Rugel, S., Jenichen, B., Robinson, I. K. (1993) Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction. Journal of Applied Physics, 74 (4). 2381-2387 doi:10.1063/1.354724
Plain TextPietsch, U., Metzger, H., Rugel, S., Jenichen, B., Robinson, I. K. (1993) Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction. Journal of Applied Physics, 74 (4). 2381-2387 doi:10.1063/1.354724
In(1993, August) Journal of Applied Physics Vol. 74 (4) AIP Publishing

See Also

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Rhan, H., Pietsch, U., Rugel, S., Metzger, H., Peisl, J. (1993) Investigations of semiconductor superlattices by depth‐sensitive x‐ray methods. Journal of Applied Physics, 74 (1). 146-152 doi:10.1063/1.354130
Rose, D., Pietsch, U., Förster, A., Metzger, T.H. (1995) Depth resolved investigations of the relaxation behaviour in strained GaInAs/GaAs superlattices using grazing incidence X-ray diffraction. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 97 (1). 333-336 doi:10.1016/0168-583x(94)00739-x
Pietsch, U., Metzger, T. H., Seifert, W. (1995) Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x‐ray diffraction. Journal of Applied Physics, 78 (5). 3144-3148 doi:10.1063/1.360001
Pietsch, U., Seifert, W., Fornell, J.-O., Rhan, H., Metzger, H., Rugel, S., Peisl, J. (1992) Investigation of a semiconductor superlattice by use of grazing incidence X-ray diffraction. Applied Surface Science, 54. 502-506 doi:10.1016/0169-4332(92)90095-f
Rose, D., Pietsch, U., Förster, A., Metzger, H. (1994) Depth resolved investigation of the relaxation behaviour in strained GaInAs/GaAs superlattices. Physica B: Condensed Matter, 198 (1). 256-258 doi:10.1016/0921-4526(94)90174-0
Rugel, S., Wallner, G., Metzger, H., Peisl, J. (1993) Grazing-incidence X-ray diffraction on ion-implanted silicon. Journal of Applied Crystallography, 26 (1). 34-40 doi:10.1107/s0021889892007799
Metzger, T. H., Pietsch, U., Gartstein, E. (1999) High-Resolution Lattice Parameter Measurement by X-Ray Grazing Incidence Diffraction. physica status solidi (a), 174 (2). 395-402 doi:10.1002/(sici)1521-396x(199908)174:2<395::aid-pssa395>3.0.co;2-#
Darowski, N, Paschke, K, Pietsch, U, Wang, K H, Forchel, A, Baumbach, T, Zeimer, U (1997) Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/16/001
Rhan, H., Pietsch, U. (1988) Investigation of nanometer layer heterostructures by X-ray grazing incidence diffraction. physica status solidi (a), 107 (2). doi:10.1002/pssa.2211070244
Rose, D., Pietsch, U., Zeimer, U. (1997) Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction. Journal of Applied Physics, 81 (6). 2601-2606 doi:10.1063/1.363924
Ulyanenkov, A P, Stepanov, S A, Pietsch, U, Kohler, R (1995) A dynamical diffraction approach to grazing-incidence X-ray diffraction by multilayers with lateral lattice misfits. Journal of Physics D: Applied Physics, 28. 2522-2528 doi:10.1088/0022-3727/28/12/020
 
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