Darowski, N, Paschke, K, Pietsch, U, Wang, K H, Forchel, A, Baumbach, T, Zeimer, U (1997) Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/16/001

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Reference Type	Journal (article/letter/editorial)
Title	Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction
Journal	Journal of Physics D: Applied Physics
Authors	Darowski, N		Author
	Paschke, K		Author
	Pietsch, U		Author
	Wang, K H		Author
	Forchel, A		Author
	Baumbach, T		Author
	Zeimer, U		Author
Year	1997 (August 21)	Volume	30
Publisher	IOP Publishing
DOI	doi:10.1088/0022-3727/30/16/001Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	5666575	Long-form Identifier	mindat:1:5:5666575:6
GUID	0
Full Reference	Darowski, N, Paschke, K, Pietsch, U, Wang, K H, Forchel, A, Baumbach, T, Zeimer, U (1997) Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/16/001
Plain Text	Darowski, N, Paschke, K, Pietsch, U, Wang, K H, Forchel, A, Baumbach, T, Zeimer, U (1997) Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/16/001
In	(1997) Journal of Physics D: Applied Physics Vol. 30. IOP Publishing

	Darowski, N., Paschke, K., Pietsch, U., Wang, K., Forchel, A., Lübbert, D., Baumbach, T. (1998) Structural characterisation of a GaAs surface wire structure by triple axis X-ray grazing incidence diffraction. Physica B: Condensed Matter, 248 (1). 104-108 doi:10.1016/s0921-4526(98)00212-9
	Rose, D, Pietsch, U, Gottschalch, V, Rhan, H (1995) Investigation of InAs single quantum wells buried in GaAs(001) using grazing incidence X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/048
	Grigorian, S A, Grenzer, J, Feranchuk, S, Zeimer, U, Pietsch, U (2003) Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/346
	Rose, D., Pietsch, U., Zeimer, U. (1997) Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction. Journal of Applied Physics, 81 (6). 2601-2606 doi:10.1063/1.363924
	Ulyanenkov, A., Baumbach, T., Darowski, N., Pietsch, U., Wang, K. H., Forchel, A., Wiebach, T. (1999) In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001]. Journal of Applied Physics, 85 (3). 1524-1530 doi:10.1063/1.369282
	Ulyanenkov, A, Inaba, K, Mikulík, P, Darowski, N, Omote, K, Pietsch, U, Grenzer, J, Forchel, A (2001) X-ray diffraction and reflectivity analysis of GaAs/InGaAs free-standing trapezoidal quantum wires. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/10a/337
	Pietsch, U., Metzger, T. H., Seifert, W. (1995) Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x‐ray diffraction. Journal of Applied Physics, 78 (5). 3144-3148 doi:10.1063/1.360001
	Paschke, K., Geue, T., Barberka, T. A., Bolm, A., Pietsch, U., Rösch, M., Batke, E., Faller, F., Kerkel, K., Oshinowo, J., Forchel, A. (1997) Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction. Applied Physics Letters, 70 (8). 1031-1033 doi:10.1063/1.118473
	Zeimer, U, Grenzer, J, Pietsch, U, Gramlich, S, Bugge, F, Smirnitzki, V, Weyers, M, Tränkle, G (2001) Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/10a/338
	Zeimer, U, Baumbach, T, Grenzer, J, Lübbert, D, Mazuelas, A, Pietsch, U, Erbert, G (1999) In situcharacterization of strain distribution in broad-area high-power lasers under operation by high-resolution x-ray diffraction and topography using synchrotron radiation. Journal of Physics D: Applied Physics, 32. doi:10.1088/0022-3727/32/10a/326
	Zhuang, Y, Holý, V, Stangl, J, Darhuber, A A, Mikulik, P, Zerlauth, S, Schäffler, F, Bauer, G, Darowski, N, Lübbert, D, Pietsch, U (1999) Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction. Journal of Physics D: Applied Physics, 32. doi:10.1088/0022-3727/32/10a/344

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