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Rose, D., Pietsch, U., Zeimer, U. (1997) Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction. Journal of Applied Physics, 81 (6). 2601-2606 doi:10.1063/1.363924

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction
JournalJournal of Applied Physics
AuthorsRose, D.Author
Pietsch, U.Author
Zeimer, U.Author
Year1997 (March 15)Volume81
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.363924Search in ResearchGate
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Mindat Ref. ID5084847Long-form Identifiermindat:1:5:5084847:2
GUID0
Full ReferenceRose, D., Pietsch, U., Zeimer, U. (1997) Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction. Journal of Applied Physics, 81 (6). 2601-2606 doi:10.1063/1.363924
Plain TextRose, D., Pietsch, U., Zeimer, U. (1997) Characterization of InxGa1−xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction. Journal of Applied Physics, 81 (6). 2601-2606 doi:10.1063/1.363924
In(1997, March) Journal of Applied Physics Vol. 81 (6) AIP Publishing

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Rose, D, Pietsch, U, Gottschalch, V, Rhan, H (1995) Investigation of InAs single quantum wells buried in GaAs(001) using grazing incidence X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/048
Darowski, N, Paschke, K, Pietsch, U, Wang, K H, Forchel, A, Baumbach, T, Zeimer, U (1997) Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction. Journal of Physics D: Applied Physics, 30. doi:10.1088/0022-3727/30/16/001
Grigorian, S A, Grenzer, J, Feranchuk, S, Zeimer, U, Pietsch, U (2003) Grazing-incidence diffraction study of strain-modulated single quantum well nanostructures. Journal of Physics D: Applied Physics, 36. doi:10.1088/0022-3727/36/10a/346
Pietsch, U., Rose, D. (1996) Depth-selective analysis of buried semiconductor layers using X-ray grazing incidence diffraction. Acta Crystallographica Section A Foundations of Crystallography, 52. doi:10.1107/s0108767396080634
Zeimer, U, Grenzer, J, Pietsch, U, Gramlich, S, Bugge, F, Smirnitzki, V, Weyers, M, Tränkle, G (2001) Investigation of strain-modulated InGaAs nanostructures by grazing-incidence x-ray diffraction and photoluminescence. Journal of Physics D: Applied Physics, 34. doi:10.1088/0022-3727/34/10a/338
Imperatori, P., Lamelas, F. J., Fuoss, P. H. (1996) Study of relaxed InxGa1−xAs epilayers on GaAs by grazing incidence x‐ray diffraction. Journal of Applied Physics, 80 (10). 5723-5726 doi:10.1063/1.363625
Pietsch, U., Metzger, T. H., Seifert, W. (1995) Enlarged quantum well in a semiconductor superlattice studied by depth resolved grazing incidence x‐ray diffraction. Journal of Applied Physics, 78 (5). 3144-3148 doi:10.1063/1.360001
Sato, M., Zeimer, U., Bugge, F., Gramlich, S., Weyers, M. (1997) Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy. Applied Physics Letters, 70 (9). 1134-1136 doi:10.1063/1.118507
Atici, Y., Yildiz, K., Akgul, U. (2015) Electron Microscopy of Cracks in InxGa1-xAs/GaAs(001) Multi-Quantum Wells. Acta Physica Polonica A, 127 (3). 859-862 doi:10.12693/aphyspola.127.859
Pietsch, U., Metzger, H., Rugel, S., Jenichen, B., Robinson, I. K. (1993) Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction. Journal of Applied Physics, 74 (4). 2381-2387 doi:10.1063/1.354724
Paschke, K., Geue, T., Barberka, T. A., Bolm, A., Pietsch, U., Rösch, M., Batke, E., Faller, F., Kerkel, K., Oshinowo, J., Forchel, A. (1997) Characterization of lateral semiconductor nanostructures by means of x-ray grazing-incidence diffraction. Applied Physics Letters, 70 (8). 1031-1033 doi:10.1063/1.118473
 
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