Reference Type | Journal (article/letter/editorial) |
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Title | Luminescence properties of heavily carbon doped GaAs |
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Journal | Journal of Applied Physics |
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Authors | Lee, Jeong‐Seok | Author |
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Kim, In | Author |
Choe, Byung‐Doo | Author |
Jeong, Weon Guk | Author |
Sin, Y. K. | Author |
Min, W. S. | Author |
Year | 1996 (June 15) | Volume | 79 |
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Issue | 12 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.362603Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5078051 | Long-form Identifier | mindat:1:5:5078051:2 |
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|
GUID | 0 |
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Full Reference | Lee, Jeong‐Seok, Kim, In, Choe, Byung‐Doo, Jeong, Weon Guk, Sin, Y. K., Min, W. S. (1996) Luminescence properties of heavily carbon doped GaAs. Journal of Applied Physics, 79 (12). 9278-9282 doi:10.1063/1.362603 |
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Plain Text | Lee, Jeong‐Seok, Kim, In, Choe, Byung‐Doo, Jeong, Weon Guk, Sin, Y. K., Min, W. S. (1996) Luminescence properties of heavily carbon doped GaAs. Journal of Applied Physics, 79 (12). 9278-9282 doi:10.1063/1.362603 |
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In | (1996, June) Journal of Applied Physics Vol. 79 (12) AIP Publishing |
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