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Picozzi, S., Continenza, A., Massidda, S., Freeman, A.J. (2002) Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study. physica status solidi (a), 190 (1). 257-262 doi:10.1002/1521-396x(200203)190:1<257::aid-pssa257>3.0.co;2-i

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Reference TypeJournal (article/letter/editorial)
TitleSchottky Barrier Height in GaN/Al Junctions: an ab-initio Study
Journalphysica status solidi (a)
AuthorsPicozzi, S.Author
Continenza, A.Author
Massidda, S.Author
Freeman, A.J.Author
Year2002 (March)Volume190
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200203)190:1<257::aid-pssa257>3.0.co;2-iSearch in ResearchGate
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Mindat Ref. ID5087654Long-form Identifiermindat:1:5:5087654:5
GUID0
Full ReferencePicozzi, S., Continenza, A., Massidda, S., Freeman, A.J. (2002) Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study. physica status solidi (a), 190 (1). 257-262 doi:10.1002/1521-396x(200203)190:1<257::aid-pssa257>3.0.co;2-i
Plain TextPicozzi, S., Continenza, A., Massidda, S., Freeman, A.J. (2002) Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study. physica status solidi (a), 190 (1). 257-262 doi:10.1002/1521-396x(200203)190:13.0.co;2-i
In(2002, March) physica status solidi (a) Vol. 190 (1) Wiley

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Nagahama, S., Yanamoto, T., Sano, M., Mukai, T. (2002) Characteristics of Laser Diodes Composed of GaN-Based Semiconductor. physica status solidi (a), 190 (1). 235-246 doi:10.1002/1521-396x(200203)190:1<235::aid-pssa235>3.0.co;2-y
Di Carlo, Aldo, Kavokin, Alexey (2002) Preface: phys. stat. sol. (a) 190/1. physica status solidi (a), 190 (1). 3 doi:10.1002/1521-396x(200203)190:1<3::aid-pssa3>3.0.co;2-p
Kishino, K., Kikuchi, A. (2002) Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices. physica status solidi (a), 190 (1). 23-31 doi:10.1002/1521-396x(200203)190:1<23::aid-pssa23>3.0.co;2-k
Scolfaro, L.M.R. (2002) Phase Separation in Cubic Group-III Nitride Alloys. physica status solidi (a), 190 (1). 15-22 doi:10.1002/1521-396x(200203)190:1<15::aid-pssa15>3.0.co;2-a
Nikolaev, V.V., Portnoi, M.E. (2002) Ionization Degree of Electron-Hole Plasma in GaN/AlGaN Quantum Wells. physica status solidi (a), 190 (1). 113-119 doi:10.1002/1521-396x(200203)190:1<113::aid-pssa113>3.0.co;2-h
Reale, A., Massari, G., Di Carlo, A., Lugli, P. (2002) Dynamic Screening in AlGaN/GaN Multi Quantum Wells. physica status solidi (a), 190 (1). 81-86 doi:10.1002/1521-396x(200203)190:1<81::aid-pssa81>3.0.co;2-k
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Yoshikawa, A., Xu, K., Taniyasu, Y., Takahashi, K. (2002) Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE. physica status solidi (a), 190 (1). 33-41 doi:10.1002/1521-396x(200203)190:1<33::aid-pssa33>3.0.co;2-i
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