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Yoshikawa, A., Xu, K., Taniyasu, Y., Takahashi, K. (2002) Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE. physica status solidi (a), 190 (1). 33-41 doi:10.1002/1521-396x(200203)190:1<33::aid-pssa33>3.0.co;2-i

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Reference TypeJournal (article/letter/editorial)
TitleSpectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE
Journalphysica status solidi (a)
AuthorsYoshikawa, A.Author
Xu, K.Author
Taniyasu, Y.Author
Takahashi, K.Author
Year2002 (March)Volume190
Issue1
PublisherWiley
DOIdoi:10.1002/1521-396x(200203)190:1<33::aid-pssa33>3.0.co;2-iSearch in ResearchGate
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Mindat Ref. ID5087666Long-form Identifiermindat:1:5:5087666:0
GUID0
Full ReferenceYoshikawa, A., Xu, K., Taniyasu, Y., Takahashi, K. (2002) Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE. physica status solidi (a), 190 (1). 33-41 doi:10.1002/1521-396x(200203)190:1<33::aid-pssa33>3.0.co;2-i
Plain TextYoshikawa, A., Xu, K., Taniyasu, Y., Takahashi, K. (2002) Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE. physica status solidi (a), 190 (1). 33-41 doi:10.1002/1521-396x(200203)190:13.0.co;2-i
In(2002, March) physica status solidi (a) Vol. 190 (1) Wiley


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