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Godey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M. F., Barbot, J. F., Leroy, B. (2000) Cavities and dislocations induced in silicon by MeV He implantation. Journal of Applied Physics, 87 (5). 2158-2161 doi:10.1063/1.372155

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Reference TypeJournal (article/letter/editorial)
TitleCavities and dislocations induced in silicon by MeV He implantation
JournalJournal of Applied Physics
AuthorsGodey, S.Author
Sauvage, T.Author
Ntsoenzok, E.Author
Erramli, H.Author
Beaufort, M. F.Author
Barbot, J. F.Author
Leroy, B.Author
Year2000 (March)Volume87
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.372155Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5100915Long-form Identifiermindat:1:5:5100915:9
GUID0
Full ReferenceGodey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M. F., Barbot, J. F., Leroy, B. (2000) Cavities and dislocations induced in silicon by MeV He implantation. Journal of Applied Physics, 87 (5). 2158-2161 doi:10.1063/1.372155
Plain TextGodey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M. F., Barbot, J. F., Leroy, B. (2000) Cavities and dislocations induced in silicon by MeV He implantation. Journal of Applied Physics, 87 (5). 2158-2161 doi:10.1063/1.372155
In(2000, March) Journal of Applied Physics Vol. 87 (5) AIP Publishing

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Oliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Dislocations induced by bubble formation in high energy He implantation in silicon. Journal of Applied Physics, 89 (10). 5332-5338 doi:10.1063/1.1327289
Beaufort, M. F., Oliviero, E., Garem, H., Godey, S., Ntsoenzok, E., Blanchard, C., Barbott, J. F. (2000) Defects in silicon induced by high energy helium implantation and their evolution during anneals. Philosophical Magazine B, 80 (11). 1975-1985 doi:10.1080/13642810008216520
Desgardin, P., Barthe, M.-F., Ntsoenzok, E., Liu, C.-L. (2006) Modifications of He implantation induced cavities in silicon by MeV silicon implantation. Applied Surface Science, 252. 3231-3236 doi:10.1016/j.apsusc.2005.08.080
Grisolia, J., Claverie, A., Assayag, G. Ben, Godey, S., Ntsoenzok, E., Labhom, F., Van Veen, A. (2002) Growth mechanism of cavities in MeV helium implanted silicon. Journal of Applied Physics, 91 (11). 9027-9030 doi:10.1063/1.1469207
Oliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Influence of dose rate on bubble formation by high energy He implantation in silicon. Journal of Applied Physics, 90 (4). 1718-1724 doi:10.1063/1.1385576
Schmidt, D. C., Svensson, B. G., Keskitalo, N., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C. (1998) Proximity gettering of platinum in proton irradiated silicon. Journal of Applied Physics, 84 (8). 4214-4218 doi:10.1063/1.368695
Schmidt, D. C., Svensson, B. G., Lindström, J. L., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C. (1999) 2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects. Journal of Applied Physics, 85 (7). 3556-3560 doi:10.1063/1.369773
Texier, M, Pichaud, B, Beaufort, M-F, Barbot, J-F (2013) Structural disordering and extended defects produced by He-implantation in silicon carbide. Journal of Physics D: Applied Physics, 46. 485105pp. doi:10.1088/0022-3727/46/48/485105
Babonneau, D., Beaufort, M.-F., Declémy, A., Barbot, J.-F., Simon, J.-P. (2006) Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon. Journal of Applied Physics, 99 (11). 113507pp. doi:10.1063/1.2197305
Oliviero, E., David, M. L., Beaufort, M. F., Nomgaudyte, J., Pranevicius, L., Declémy, A., Barbot, J. F. (2002) Formation of bubbles by high dose He implantation in 4H–SiC. Journal of Applied Physics, 91 (3). 1179-1186 doi:10.1063/1.1429760
Schmidt, D. C., Svensson, B. G., Godey, S., Ntsoenzok, E., Barbot, J. F., Blanchard, C. (1999) The influence of diffusion temperature and ion dose on proximity gettering of platinum in silicon implanted with alpha particles at low doses. Applied Physics Letters, 74 (22). 3329-3331 doi:10.1063/1.123334
 
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