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Oliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Influence of dose rate on bubble formation by high energy He implantation in silicon. Journal of Applied Physics, 90 (4). 1718-1724 doi:10.1063/1.1385576

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of dose rate on bubble formation by high energy He implantation in silicon
JournalJournal of Applied Physics
AuthorsOliviero, E.Author
Beaufort, M. F.Author
Barbot, J. F.Author
Year2001 (August 15)Volume90
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.1385576Search in ResearchGate
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Mindat Ref. ID5110101Long-form Identifiermindat:1:5:5110101:3
GUID0
Full ReferenceOliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Influence of dose rate on bubble formation by high energy He implantation in silicon. Journal of Applied Physics, 90 (4). 1718-1724 doi:10.1063/1.1385576
Plain TextOliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Influence of dose rate on bubble formation by high energy He implantation in silicon. Journal of Applied Physics, 90 (4). 1718-1724 doi:10.1063/1.1385576
In(2001, August) Journal of Applied Physics Vol. 90 (4) AIP Publishing

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Oliviero, E., Beaufort, M. F., Barbot, J. F. (2001) Dislocations induced by bubble formation in high energy He implantation in silicon. Journal of Applied Physics, 89 (10). 5332-5338 doi:10.1063/1.1327289
Oliviero, E., David, M. L., Beaufort, M. F., Nomgaudyte, J., Pranevicius, L., Declémy, A., Barbot, J. F. (2002) Formation of bubbles by high dose He implantation in 4H–SiC. Journal of Applied Physics, 91 (3). 1179-1186 doi:10.1063/1.1429760
Oliviero, E., David, M. L., Beaufort, M. F., Barbot, J. F., van Veen, A. (2002) On the effects of implantation temperature in helium implanted silicon. Applied Physics Letters, 81 (22). 4201-4203 doi:10.1063/1.1525059
Oliviero, E., David, M. L., Fichtner, P. F. P., Beaufort, M. F., Barbot, J. F. (2013) Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering. Journal of Applied Physics, 113 (8). 83515pp. doi:10.1063/1.4793507
Oliviero, E., Peripolli, S., Amaral, L., Fichtner, P. F. P., Beaufort, M. F., Barbot, J. F., Donnelly, S. E. (2006) Damage accumulation in neon implanted silicon. Journal of Applied Physics, 100 (4). 43505pp. doi:10.1063/1.2220644
Godey, S., Sauvage, T., Ntsoenzok, E., Erramli, H., Beaufort, M. F., Barbot, J. F., Leroy, B. (2000) Cavities and dislocations induced in silicon by MeV He implantation. Journal of Applied Physics, 87 (5). 2158-2161 doi:10.1063/1.372155
Oliviero, E., Beaufort, M. F., Barbot, J. F., van Veen, A., Fedorov, A. V. (2003) Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation. Journal of Applied Physics, 93 (1). 231-238 doi:10.1063/1.1527974
Vallet, M., Barbot, J. F., Oliviero, E., Donnelly, S. E., Hinks, J. A., Beaufort, M. F. (2014) In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply. Journal of Applied Physics, 115 (22). 223515pp. doi:10.1063/1.4883766
Pawley, C J, Beaufort, M F, Oliviero, E, Hinks, J A, Barbot, J F, Donnelly, S E (2012) Anin-situTEM investigation of He bubble evolution in SiC. Journal of Physics: Conference Series, 371. 12052pp. doi:10.1088/1742-6596/371/1/012052
Beaufort, M. F., Pailloux, F., Declémy, A., Barbot, J. F. (2003) Transmission electron microscopy investigations of damage induced by high energy helium implantation in 4H–SiC. Journal of Applied Physics, 94 (11). 7116-7120 doi:10.1063/1.1626796
Beaufort, M.-F., Vallet, M., Nicolaï, J., Oliviero, E., Barbot, J.-F. (2015) In-situ evolution of helium bubbles in SiC under irradiation. Journal of Applied Physics, 118 (20). 205904pp. doi:10.1063/1.4936562
 
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