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Huang, Y. S., Malikova, L., Pollak, Fred H., Debray, J.-P., Hoffman, R., Amtout, A., Stall, R. A. (2002) Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure. Journal of Applied Physics, 91 (9). 6203-6205 doi:10.1063/1.1467396

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Reference TypeJournal (article/letter/editorial)
TitleSurface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure
JournalJournal of Applied Physics
AuthorsHuang, Y. S.Author
Malikova, L.Author
Pollak, Fred H.Author
Debray, J.-P.Author
Hoffman, R.Author
Amtout, A.Author
Stall, R. A.Author
Year2002 (May)Volume91
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1467396Search in ResearchGate
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Mindat Ref. ID5114883Long-form Identifiermindat:1:5:5114883:8
GUID0
Full ReferenceHuang, Y. S., Malikova, L., Pollak, Fred H., Debray, J.-P., Hoffman, R., Amtout, A., Stall, R. A. (2002) Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure. Journal of Applied Physics, 91 (9). 6203-6205 doi:10.1063/1.1467396
Plain TextHuang, Y. S., Malikova, L., Pollak, Fred H., Debray, J.-P., Hoffman, R., Amtout, A., Stall, R. A. (2002) Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure. Journal of Applied Physics, 91 (9). 6203-6205 doi:10.1063/1.1467396
In(2002, May) Journal of Applied Physics Vol. 91 (9) AIP Publishing

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Liang, J. S., Wang, S. D., Huang, Y. S., Malikova, L., Pollak, Fred H., Debray, J. P., Hoffman, R., Amtout, A., Stall, R. A. (2003) Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure. Journal of Applied Physics, 93 (4). 1874-1878 doi:10.1063/1.1538323
Huang, Y. S., Malikova, L., Pollak, Fred H., Shen, H., Pamulapati, J., Newman, P. (2000) Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence. Applied Physics Letters, 77 (1). 37-39 doi:10.1063/1.126869
Liang, J. S., Huang, Y. S., Tien, C. W., Chang, Y. M., Chen, C. W., Li, N. Y., Li, P. W., Pollak, Fred H. (2001) Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence. Applied Physics Letters, 79 (20). 3227-3229 doi:10.1063/1.1418027
Wang, S. D., Liang, J. S., Huang, Y. S., Tien, C. W., Chang, Y. M., Chen, C. W., Li, N. Y., Tiong, K. K., Pollak, Fred H. (2002) Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure. Journal of Applied Physics, 92 (5). 2350-2353 doi:10.1063/1.1497697
Liang, J. S., Wang, S. D., Huang, Y. S., Tien, C. W., Chang, Y. M., Chen, C. W., Li, N. Y., Lin, D. Y., Pollak, Fred H. (2002) Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure. Applied Physics Letters, 80 (5). 752-754 doi:10.1063/1.1445463
Jaeger, A., Sun, W. D., Pollak, Fred H., Reynolds, C. L., Geva, M. (1999) Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy. Journal of Applied Physics, 86 (4). 2020-2024 doi:10.1063/1.371150
Cheng, Y. T., Huang, Y. S., Lin, D. Y., Tiong, K. K., Pollak, Fred H., Evans, K. R. (2001) Surface photovoltage spectroscopy characterization of a GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structure. Applied Physics Letters, 79 (7). 949-951 doi:10.1063/1.1392974
Liang, J S, Wang, S D, Huang, Y S, Tien, C W, Chang, Y M, Chen, C W, Li, N Y, Tiong, K K, Pollak, F H (2003) Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures. Journal of Physics: Condensed Matter, 15 (2). 55-66 doi:10.1088/0953-8984/15/2/306
Yang, Long, Wu, Ming C., Tai, Kuochou, Tanbun‐Ek, Tawee, Logan, Ralph A. (1990) InGaAsP(1.3 μm)/InP vertical‐cavity surface‐emitting laser grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 56 (10). 889-891 doi:10.1063/1.102619
Ram, R. J., Yang, L., Nauka, K., Houng, Y. M., Ludowise, M., Mars, D. E., Dudley, J. J., Wang, S. Y. (1993) Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers. Applied Physics Letters, 62 (20). 2474-2476 doi:10.1063/1.109323
McLaren, S., Kilen, I., Moloney, J. V. (2021) Microscopic modeling of non-normal incidence vertical external cavity surface-emitting laser cavities. Applied Physics Letters, 118 (12) 121103pp. doi:10.1063/5.0040185
 
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