Reference Type | Journal (article/letter/editorial) |
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Title | Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics |
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Journal | Journal of Applied Physics |
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Authors | Pan, Tung-Ming | Author |
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Hou, Sung-Ju | Author |
Wang, Chih-Hwa | Author |
Year | 2008 (June 15) | Volume | 103 |
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Issue | 12 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.2942405Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 5153531 | Long-form Identifier | mindat:1:5:5153531:7 |
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GUID | 0 |
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Full Reference | Pan, Tung-Ming, Hou, Sung-Ju, Wang, Chih-Hwa (2008) Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics. Journal of Applied Physics, 103 (12). 124105pp. doi:10.1063/1.2942405 |
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Plain Text | Pan, Tung-Ming, Hou, Sung-Ju, Wang, Chih-Hwa (2008) Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics. Journal of Applied Physics, 103 (12). 124105pp. doi:10.1063/1.2942405 |
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In | (2008, June) Journal of Applied Physics Vol. 103 (12) AIP Publishing |
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