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Pan, Tung-Ming, Yen, Li-Chen, Su, Sheng-Han (2009) Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics. Applied Surface Science, 256. 1534-1537 doi:10.1016/j.apsusc.2009.09.017

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Reference TypeJournal (article/letter/editorial)
TitleEffect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics
JournalApplied Surface Science
AuthorsPan, Tung-MingAuthor
Yen, Li-ChenAuthor
Su, Sheng-HanAuthor
Year2009 (December)Volume256
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2009.09.017Search in ResearchGate
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Mindat Ref. ID9915356Long-form Identifiermindat:1:5:9915356:8
GUID0
Full ReferencePan, Tung-Ming, Yen, Li-Chen, Su, Sheng-Han (2009) Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics. Applied Surface Science, 256. 1534-1537 doi:10.1016/j.apsusc.2009.09.017
Plain TextPan, Tung-Ming, Yen, Li-Chen, Su, Sheng-Han (2009) Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics. Applied Surface Science, 256. 1534-1537 doi:10.1016/j.apsusc.2009.09.017
In(n.d.) Applied Surface Science Vol. 256. Elsevier BV

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Pan, Tung-Ming, Yen, Li-Chen (2010) Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics. Applied Surface Science, 256. 1845-1848 doi:10.1016/j.apsusc.2009.10.017
Pan, Tung-Ming, Yen, Li-Chen (2010) Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics. Applied Surface Science, 256. 2786-2791 doi:10.1016/j.apsusc.2009.11.029
Pan, Tung-Ming, Huang, Chun-Chin (2010) Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics. Applied Surface Science, 256. 7186-7193 doi:10.1016/j.apsusc.2010.05.048
Pan, Tung-Ming, Chang, Wei-Tsung, Chiu, Fu-Chien (2011) Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics. Applied Surface Science, 257. 3964-3968 doi:10.1016/j.apsusc.2010.11.144
Pan, Tung-Ming, Hou, Sung-Ju (2008) Effect of postdeposition annealing on the interfacial and electrical properties of high-k NdOxNy gate dielectrics. Applied Physics Letters, 92 (7). 72907pp. doi:10.1063/1.2884333
Pan, Tung-Ming, Huang, Wei-Shiang (2009) Physical and electrical characteristics of a high-k Yb2O3 gate dielectric. Applied Surface Science, 255. 4979-4982 doi:10.1016/j.apsusc.2008.12.048
Pan, Tung-Ming, Lee, Jian-Der, Shu, Wei-Hao, Chen, Tsung-Te (2006) Structural and electrical properties of neodymium oxide high-k gate dielectrics. Applied Physics Letters, 89 (23). 232908pp. doi:10.1063/1.2402237
Pan, Tung-Ming, Chen, Fa-Hsyang, Hung, Meng-Ning (2015) Influence of Annealing Temperature on Structural and Electrical Characteristics of High- Yb2O3 Gate Dielectrics for InGaZnO Thin-Film Transistors. Science of Advanced Materials, 7. 1108-1113 doi:10.1166/sam.2015.2155
Pan, Tung-Ming, Shu, Wei-Hao (2008) Influence of Neodymium Content on Structural Properties and Electrical Characteristics of High-k NdTiO[sub 3] Gate Dielectrics. Journal of the Electrochemical Society, 155. doi:10.1149/1.2835213
Hsieh, Chun-I., Pan, Tung-Ming, Lin, Jian-Chyi, Peng, Yan-Bo, Huang, Tsai-Yu, Wu, Chang-Rong, Shih, Steven (2009) Structural properties of Al2O3 dielectrics grown on TiN metal substrates by atomic layer deposition. Applied Surface Science, 255. 3769-3772 doi:10.1016/j.apsusc.2008.10.048
Ma, T.P. (2008) Electrical characterization of high-k gate dielectrics on semiconductors. Applied Surface Science, 255. 672-675 doi:10.1016/j.apsusc.2008.07.010
 
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