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Pan, Tung-Ming, Huang, Chun-Chin (2010) Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics. Applied Surface Science, 256. 7186-7193 doi:10.1016/j.apsusc.2010.05.048

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Reference TypeJournal (article/letter/editorial)
TitleEffects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics
JournalApplied Surface Science
AuthorsPan, Tung-MingAuthor
Huang, Chun-ChinAuthor
Year2010 (September)Volume256
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2010.05.048Search in ResearchGate
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Mindat Ref. ID9915063Long-form Identifiermindat:1:5:9915063:1
GUID0
Full ReferencePan, Tung-Ming, Huang, Chun-Chin (2010) Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics. Applied Surface Science, 256. 7186-7193 doi:10.1016/j.apsusc.2010.05.048
Plain TextPan, Tung-Ming, Huang, Chun-Chin (2010) Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics. Applied Surface Science, 256. 7186-7193 doi:10.1016/j.apsusc.2010.05.048
In(n.d.) Applied Surface Science Vol. 256. Elsevier BV

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Pan, Tung-Ming, Yen, Li-Chen (2010) Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics. Applied Surface Science, 256. 2786-2791 doi:10.1016/j.apsusc.2009.11.029
Pan, Tung-Ming, Yen, Li-Chen (2010) Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics. Applied Surface Science, 256. 1845-1848 doi:10.1016/j.apsusc.2009.10.017
Pan, Tung-Ming, Yen, Li-Chen, Su, Sheng-Han (2009) Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics. Applied Surface Science, 256. 1534-1537 doi:10.1016/j.apsusc.2009.09.017
Pan, Tung-Ming, Huang, Wei-Shiang (2009) Effects of Oxygen Content on the Structural and Electrical Properties of Thin Yb[sub 2]O[sub 3] Gate Dielectrics. Journal of the Electrochemical Society, 156. doi:10.1149/1.3005993
Pan, Tung-Ming, Hou, Sung-Ju (2008) Effect of postdeposition annealing on the interfacial and electrical properties of high-k NdOxNy gate dielectrics. Applied Physics Letters, 92 (7). 72907pp. doi:10.1063/1.2884333
Pan, Tung-Ming, Chang, Wei-Tsung, Chiu, Fu-Chien (2011) Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics. Applied Surface Science, 257. 3964-3968 doi:10.1016/j.apsusc.2010.11.144
Pan, Tung-Ming, Lee, Jian-Der, Yeh, Wen-Wei (2007) Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics. Journal of Applied Physics, 101 (2). 24110pp. doi:10.1063/1.2426937
Pan, Tung-Ming, Huang, Wei-Shiang (2009) Physical and electrical characteristics of a high-k Yb2O3 gate dielectric. Applied Surface Science, 255. 4979-4982 doi:10.1016/j.apsusc.2008.12.048
Pan, Tung-Ming, Hou, Sung-Ju, Wang, Chih-Hwa (2008) Effects of nitrogen content on the structure and electrical properties of high-k NdOxNy gate dielectrics. Journal of Applied Physics, 103 (12). 124105pp. doi:10.1063/1.2942405
Yılmaz, Koray, Karaagac, Hakan (2010) Annealing effects on structural, optical and electrical properties of e-beam evaporated CuIn0.5Ga0.5Te2 thin films. Applied Surface Science, 256. 6454-6458 doi:10.1016/j.apsusc.2010.04.034
Duan, Xingkai, Jiang, Yuezhen (2010) Annealing effects on the structural and electrical transport properties of n-type Bi2Te2.7Se0.3 thin films deposited by flash evaporation. Applied Surface Science, 256. 7365-7370 doi:10.1016/j.apsusc.2010.05.069
 
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