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Pan, Tung-Ming, Yen, Li-Chen (2010) Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics. Applied Surface Science, 256. 2786-2791 doi:10.1016/j.apsusc.2009.11.029

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics
JournalApplied Surface Science
AuthorsPan, Tung-MingAuthor
Yen, Li-ChenAuthor
Year2010 (February)Volume256
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2009.11.029Search in ResearchGate
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Mindat Ref. ID9915580Long-form Identifiermindat:1:5:9915580:3
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Full ReferencePan, Tung-Ming, Yen, Li-Chen (2010) Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics. Applied Surface Science, 256. 2786-2791 doi:10.1016/j.apsusc.2009.11.029
Plain TextPan, Tung-Ming, Yen, Li-Chen (2010) Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics. Applied Surface Science, 256. 2786-2791 doi:10.1016/j.apsusc.2009.11.029
In(n.d.) Applied Surface Science Vol. 256. Elsevier BV

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Pan, Tung-Ming, Yen, Li-Chen (2010) Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics. Applied Surface Science, 256. 1845-1848 doi:10.1016/j.apsusc.2009.10.017
Pan, Tung-Ming, Huang, Chun-Chin (2010) Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics. Applied Surface Science, 256. 7186-7193 doi:10.1016/j.apsusc.2010.05.048
Pan, Tung-Ming, Yen, Li-Chen, Su, Sheng-Han (2009) Effect of post-deposition annealing on structural and electrical properties of high-k HoTiO3 gate dielectrics. Applied Surface Science, 256. 1534-1537 doi:10.1016/j.apsusc.2009.09.017
Pan, Tung-Ming, Chang, Wei-Tsung, Chiu, Fu-Chien (2011) Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics. Applied Surface Science, 257. 3964-3968 doi:10.1016/j.apsusc.2010.11.144
Pan, Tung-Ming, Chen, Fa-Hsyang, Hung, Meng-Ning, Her, Jim-Long, Koyama, Keiichi (2014) Structural Properties and Electrical Characteristics of High-κ Tm2O3 Gate Dielectrics for InGaZnO Thin Film Transistors. Science of Advanced Materials, 6. 1973-1978 doi:10.1166/sam.2014.1963
Pan, Tung-Ming, Chen, Fa-Hsyang, Hung, Meng-Ning (2015) Influence of Annealing Temperature on Structural and Electrical Characteristics of High- Yb2O3 Gate Dielectrics for InGaZnO Thin-Film Transistors. Science of Advanced Materials, 7. 1108-1113 doi:10.1166/sam.2015.2155
Pan, Tung-Ming, Hou, Sung-Ju (2008) Effect of postdeposition annealing on the interfacial and electrical properties of high-k NdOxNy gate dielectrics. Applied Physics Letters, 92 (7). 72907pp. doi:10.1063/1.2884333
Pan, Tung-Ming, Jung, Ji-Shing, Wu, Xin-Chang (2010) Effect of postdeposition annealing on the structural and electrical characteristics of Yb2TiO5 charge trapping layers. Applied Physics Letters, 96 (16). 162901pp. doi:10.1063/1.3402774
Yılmaz, Koray, Karaagac, Hakan (2010) Annealing effects on structural, optical and electrical properties of e-beam evaporated CuIn0.5Ga0.5Te2 thin films. Applied Surface Science, 256. 6454-6458 doi:10.1016/j.apsusc.2010.04.034
Pan, Tung-Ming, Lee, Jian-Der, Yeh, Wen-Wei (2007) Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics. Journal of Applied Physics, 101 (2). 24110pp. doi:10.1063/1.2426937
Pan, Tung-Ming, Chen, Chun-Lin, Yeh, Wen Wei, Hou, Sung-Ju (2006) Structural and electrical characteristics of thin erbium oxide gate dielectrics. Applied Physics Letters, 89 (22). 222912pp. doi:10.1063/1.2399938
 
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