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Landheer, K., Goedheer, W. J., Poulios, I., Schropp, R. E. I., Rath, J. K. (2016) Chemical sputtering by H2+ and H3+ ions during silicon deposition. Journal of Applied Physics, 120 (5). 53304pp. doi:10.1063/1.4960351

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Reference TypeJournal (article/letter/editorial)
TitleChemical sputtering by H2+ and H3+ ions during silicon deposition
JournalJournal of Applied Physics
AuthorsLandheer, K.Author
Goedheer, W. J.Author
Poulios, I.Author
Schropp, R. E. I.Author
Rath, J. K.Author
Year2016 (August 7)Volume120
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.4960351Search in ResearchGate
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Mindat Ref. ID5206019Long-form Identifiermindat:1:5:5206019:3
GUID0
Full ReferenceLandheer, K., Goedheer, W. J., Poulios, I., Schropp, R. E. I., Rath, J. K. (2016) Chemical sputtering by H2+ and H3+ ions during silicon deposition. Journal of Applied Physics, 120 (5). 53304pp. doi:10.1063/1.4960351
Plain TextLandheer, K., Goedheer, W. J., Poulios, I., Schropp, R. E. I., Rath, J. K. (2016) Chemical sputtering by H2+ and H3+ ions during silicon deposition. Journal of Applied Physics, 120 (5). 53304pp. doi:10.1063/1.4960351
In(2016, August) Journal of Applied Physics Vol. 120 (5) AIP Publishing

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Stannowski, B., Rath, J. K., Schropp, R. E. I. (2003) Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition. Journal of Applied Physics, 93 (5). 2618-2625 doi:10.1063/1.1542658
Gordijn, A., Vanecek, M., Goedheer, W. J., Rath, J. K., Schropp, R. E. I. (2006) Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition. Japanese Journal of Applied Physics, 45 (8) 6166-6172 doi:10.1143/jjap.45.6166
Landheer, Kees, Goedheer, Wim J., Poulios, Ioannis, Schropp, Ruud E. I., Rath, Jatindra K. (2016) Ion bombardment measurements and simulations of a low temperature VHF PECVD SiH4-H2discharge in the a-Si:H to μc-Si:H transition regime. physica status solidi (a), 213 (7). 1680-1685 doi:10.1002/pssa.201532917
Mohan, Akshatha, Schropp, Ruud E. I., Poulios, Ioannis, Goedheer, Wim J., Rath, Jatin K. (2016) Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase. physica status solidi (a), 213 (7). 1826-1830 doi:10.1002/pssa.201532938
Mohan, A, de Jong, M M, Poulios, I, Schropp, R E I, Rath, J K (2015) Gas phase synthesis of two ensembles of silicon nanoparticles. Journal of Physics D: Applied Physics, 48. 375201pp. doi:10.1088/0022-3727/48/37/375201
Mohan, Akshatha, Schropp, Ruud E. I., Poulios, Ioannis, Goedheer, Wim J., Rath, Jatin K. (2016) Optimizing the parameter space for increased crystallinity of silicon nanoparticles grown in the gas phase (Phys. Status Solidi A 7∕2016). physica status solidi (a), 213 (7). 2008 doi:10.1002/pssa.201670645
Landheer, Kees, Kaiser, Monja, Verheijen, Marcel A, Tichelaar, Frans D, Poulios, Ioannis, Schropp, Ruud E I, Rath, Jatin K (2017) Decoupling high surface recombination velocity and epitaxial growth for silicon passivation layers on crystalline silicon. Journal of Physics D: Applied Physics, 50. 65305pp. doi:10.1088/1361-6463/aa535f
Landheer, K., Kobelev, A. A., Smirnov, A. S., Bosman, J., Deelen, S., Rossewij, M., de Waal, A. C., Poulios, I., Benschop, A. F., Schropp, R. E. I., Rath, J. K. (2017) Note: Laser-cut molybdenum grids for a retarding field energy analyzer. Review of Scientific Instruments, 88 (6). 66108pp. doi:10.1063/1.4986229
Feenstra, K. F., Schropp, R. E. I., Van der Weg, W. F. (1999) Deposition of amorphous silicon films by hot-wire chemical vapor deposition. Journal of Applied Physics, 85 (9). 6843-6852 doi:10.1063/1.370202
Gordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers. Journal of Applied Physics, 95 (12). 8290-8297 doi:10.1063/1.1745122
Schropp, R. E. I., Feenstra, K. F., Molenbroek, E. C., Meiling, H., Rath, J. K. (1997) Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition. Philosophical Magazine B, 76 (3). 309-321 doi:10.1080/01418639708241096
 
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