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Gordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers. Journal of Applied Physics, 95 (12). 8290-8297 doi:10.1063/1.1745122

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Reference TypeJournal (article/letter/editorial)
TitleRole of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers
JournalJournal of Applied Physics
AuthorsGordijn, A.Author
Rath, J. K.Author
Schropp, R. E. I.Author
Year2004 (June 15)Volume95
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1745122Search in ResearchGate
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Mindat Ref. ID5125320Long-form Identifiermindat:1:5:5125320:0
GUID0
Full ReferenceGordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers. Journal of Applied Physics, 95 (12). 8290-8297 doi:10.1063/1.1745122
Plain TextGordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers. Journal of Applied Physics, 95 (12). 8290-8297 doi:10.1063/1.1745122
In(2004, June) Journal of Applied Physics Vol. 95 (12) AIP Publishing

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Gordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Thickness determination of very thin amorphous and microcrystalline silicon layers using reflection/transmission measurements. Applied Physics Letters, 85 (21). 5096-5098 doi:10.1063/1.1825063
Gordijn, A., Rath, J.K., Schropp, R.E.I. (2004) Microcrystalline silicon growth in the presence of dopants: effect of high growth temperatures. Journal of Non-Crystalline Solids, 338. 110-114 doi:10.1016/j.jnoncrysol.2004.02.032
Gordijn, A., Vanecek, M., Goedheer, W. J., Rath, J. K., Schropp, R. E. I. (2006) Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition. Japanese Journal of Applied Physics, 45 (8) 6166-6172 doi:10.1143/jjap.45.6166
Rubinelli, F. A., Rath, J. K., Schropp, R. E. I. (2001) Microcrystalline n-i-p tunnel junction in a-Si:H/a-Si:H tandem cells. Journal of Applied Physics, 89 (7). 4010-4018 doi:10.1063/1.1352032
Saitoh, K., Kondo, M., Fukawa, M., Nishimiya, T., Matsuda, A., Futako, W., Shimizu, I. (1997) Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon. Applied Physics Letters, 71 (23). 3403-3405 doi:10.1063/1.120324
Stannowski, B., Rath, J. K., Schropp, R. E. I. (2003) Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition. Journal of Applied Physics, 93 (5). 2618-2625 doi:10.1063/1.1542658
Rath, J.K., Franken, R.H.J., Gordijn, A., Schropp, R.E.I., Goedheer, W.J. (2004) Growth mechanism of microcrystalline silicon at high pressure conditions. Journal of Non-Crystalline Solids, 338. 56-60 doi:10.1016/j.jnoncrysol.2004.02.021
Landheer, K., Goedheer, W. J., Poulios, I., Schropp, R. E. I., Rath, J. K. (2016) Chemical sputtering by H2+ and H3+ ions during silicon deposition. Journal of Applied Physics, 120 (5). 53304pp. doi:10.1063/1.4960351
Lambertz, A., Finger, F., Holländer, B., Rath, J.K., Schropp, R.E.I. (2012) Boron-doped hydrogenated microcrystalline silicon oxide (μc-SiOx:H) for application in thin-film silicon solar cells. Journal of Non-Crystalline Solids, 358 (17) 1962-1965 doi:10.1016/j.jnoncrysol.2011.12.047
Roca i Cabarrocas, P., Brenot, R., Bulkin, P., Vanderhaghen, R., Drévillon, B., French, I. (1999) Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique. Journal of Applied Physics, 86 (12). 7079-7082 doi:10.1063/1.371795
Pallarès, J., Schropp, R. E. I. (2000) Role of the buffer layer in the active junction in amorphous-crystalline silicon heterojunction solar cells. Journal of Applied Physics, 88 (1). 293-299 doi:10.1063/1.373656
 
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