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Gordijn, A., Vanecek, M., Goedheer, W. J., Rath, J. K., Schropp, R. E. I. (2006) Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition. Japanese Journal of Applied Physics, 45 (8) 6166-6172 doi:10.1143/jjap.45.6166

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition
JournalJapanese Journal of Applied Physics
AuthorsGordijn, A.Author
Vanecek, M.Author
Goedheer, W. J.Author
Rath, J. K.Author
Schropp, R. E. I.Author
Year2006 (August 4)Volume45
Issue8
PublisherJapan Society of Applied Physics
DOIdoi:10.1143/jjap.45.6166Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID15028534Long-form Identifiermindat:1:5:15028534:4
GUID0
Full ReferenceGordijn, A., Vanecek, M., Goedheer, W. J., Rath, J. K., Schropp, R. E. I. (2006) Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition. Japanese Journal of Applied Physics, 45 (8) 6166-6172 doi:10.1143/jjap.45.6166
Plain TextGordijn, A., Vanecek, M., Goedheer, W. J., Rath, J. K., Schropp, R. E. I. (2006) Influence of Pressure and Plasma Potential on High Growth Rate Microcrystalline Silicon Grown by Very High Frequency Plasma Enhanced Chemical Vapour Deposition. Japanese Journal of Applied Physics, 45 (8) 6166-6172 doi:10.1143/jjap.45.6166
In(2006, August) Japanese Journal of Applied Physics Vol. 45 (8) Japan Society of Applied Physics

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Gordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Role of growth temperature and the presence of dopants in layer-by-layer plasma deposition of thin microcrystalline silicon (μc-Si:H) doped layers. Journal of Applied Physics, 95 (12). 8290-8297 doi:10.1063/1.1745122
Rath, J.K., Franken, R.H.J., Gordijn, A., Schropp, R.E.I., Goedheer, W.J. (2004) Growth mechanism of microcrystalline silicon at high pressure conditions. Journal of Non-Crystalline Solids, 338. 56-60 doi:10.1016/j.jnoncrysol.2004.02.021
Takagi, Tomoko, Ueda, Masashi, Ito, Norikazu, Watabe, Yoshimi, Kondo, Michio (2006) Microcrystalline Silicon Solar Cells Fabricated using Array-Antenna-Type Very High Frequency Plasma-Enhanced Chemical Vapor Deposition System. Japanese Journal of Applied Physics, 45 (5) 4003-4005 doi:10.1143/jjap.45.4003
Landheer, K., Goedheer, W. J., Poulios, I., Schropp, R. E. I., Rath, J. K. (2016) Chemical sputtering by H2+ and H3+ ions during silicon deposition. Journal of Applied Physics, 120 (5). 53304pp. doi:10.1063/1.4960351
Gordijn, A., Rath, J. K., Schropp, R. E. I. (2004) Thickness determination of very thin amorphous and microcrystalline silicon layers using reflection/transmission measurements. Applied Physics Letters, 85 (21). 5096-5098 doi:10.1063/1.1825063
Paterson, Melissa J., Goldys, E. M., Zuo, H. Y., Tansley, T. L. (1998) Characterisation of Microcrystalline GaN Grown on Quartz and on Sapphire by Laser and Microwave Plasma Enhanced Metalorganic Chemical Vapour Deposition. Japanese Journal of Applied Physics, 37. 426-431 doi:10.1143/jjap.37.426
Guo, Lihui, Kondo, Michio, Fukawa, Makoto, Saitoh, Kimihiko, Matsuda, Akihisa (1998) High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition. Japanese Journal of Applied Physics, 37. doi:10.1143/jjap.37.l1116
Das, Chandan, Jana, Tapati, Ray, Swati (2004) Optoelectronic and Structural Properties of Undoped Microcrystalline Silicon Thin Films: Dependence on Substrate Temperature in Very High Frequency Plasma Enhanced Chemical Vapor Deposition Technique. Japanese Journal of Applied Physics, 43 (6) 3269-3274 doi:10.1143/jjap.43.3269
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Sobajima, Yasushi, Nakano, Shinya, Toyama, Toshihiko, Okamoto, Hiroaki (2007) High-Rate Deposition of Microcrystalline Silicon Photovoltaic Active Layers by Plasma-Enhanced Chemical Vapor Deposition at Kilo-Pascal Pressures. Japanese Journal of Applied Physics, 46. doi:10.1143/jjap.46.l199
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