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(2017) Post-deposition-annealing effect on current conduction in Al2O3films formed by atomic layer deposition with H2O oxidant. Journal of Applied Physics, 121 (7). 74502pp. doi:10.1063/1.4976211

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Reference TypeJournal (article/letter/editorial)
TitlePost-deposition-annealing effect on current conduction in Al2O3films formed by atomic layer deposition with H2O oxidant
JournalJournal of Applied Physics
Year2017 (February 21)Volume121
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.4976211Search in ResearchGate
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Mindat Ref. ID5207259Long-form Identifiermindat:1:5:5207259:6
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Full Reference(2017) Post-deposition-annealing effect on current conduction in Al2O3films formed by atomic layer deposition with H2O oxidant. Journal of Applied Physics, 121 (7). 74502pp. doi:10.1063/1.4976211
Plain Text(2017) Post-deposition-annealing effect on current conduction in Al2O3films formed by atomic layer deposition with H2O oxidant. Journal of Applied Physics, 121 (7). 74502pp. doi:10.1063/1.4976211
In(2017, February) Journal of Applied Physics Vol. 121 (7) AIP Publishing

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Kawamura, Yumi, Horita, Masahiro, Uraoka, Yukiharu (2010) Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition. Japanese Journal of Applied Physics, 49 (4) 4 doi:10.1143/jjap.49.04df19
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Hernández-Arriaga, H., López-Luna, E., Martínez‐Guerra, E., Turrubiartes, M. M., Rodríguez, A. G., Vidal, M. A. (2017) Growth of HfO2/TiO2nanolaminates by atomic layer deposition and HfO2-TiO2by atomic partial layer deposition. Journal of Applied Physics, 121 (6). 64302pp. doi:10.1063/1.4975676
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Kumar, Ravinder, Hossain, Z., Budhani, R. C. (2017) Effects of post-deposition annealing on the structure and magnetization of PLD grown yttrium iron garnet films. Journal of Applied Physics, 121 (11). 113901pp. doi:10.1063/1.4978310
Scarel, Giovanna, Hyde, G. Kevin, Hojo, Daisuke, Parsons, Gregory N. (2008) Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures. Journal of Applied Physics, 104 (9). 94314pp. doi:10.1063/1.3013439
Ye, Gang, Wang, Hong, Geok Ng, Serene Lay, Ji, Rong, Arulkumaran, Subramaniam, Ng, Geok Ing, Li, Yang, Liu, Zhi Hong, Ang, Kian Siong (2014) Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition. Applied Physics Letters, 105 (15). 152104pp. doi:10.1063/1.4898577
Ghiraldelli, Elisa, Pelosi, Claudio, Gombia, Enos, Frigeri, Cesare, Vanzetti, Lia, Abdullayeva, Sevda (2008) Growth of Dielectric Al2O3Films by Atomic Layer Deposition. Japanese Journal of Applied Physics, 47 (10) 8174-8177 doi:10.1143/jjap.47.8174
Bohórquez Martínez, Carolina, Vazquez Arce, Jorge Luis, Cuentas Gallegos, Ana Karina, Tiznado, Hugo (2025) Enhanced oxygen sensing in ZrO2 thin films via atomic layer deposition by post-deposition annealing. Ceramics International, 51 (7). doi:10.1016/j.ceramint.2024.12.380
 
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