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(2018, April) Journal of Applied Physics Vol. 123 (16) AIP Publishing

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Reference TypeJournal (issue)
JournalJournal of Applied Physics
Year2018 (April)Volume123
Issue<   16   >
PublisherAIP Publishing
Mindat Ref. ID5208767Long-form Identifiermindat:1:5:5208767:7
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Full Reference(2018, April) Journal of Applied Physics Vol. 123 (16) AIP Publishing
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In(2018) Journal of Applied Physics Vol. 123. AIP Publishing

Contains

Mitchell, Brandon, Dierolf, Volkmar, Gregorkiewicz, Tom, Fujiwara, Yasufumi (2018) Perspective: Toward efficient GaN-based red light emitting diodes using europium doping. Journal of Applied Physics, 123 (16). 160901pp. doi:10.1063/1.5010762
Abe, Eisuke, Sasaki, Kento (2018) Tutorial: Magnetic resonance with nitrogen-vacancy centers in diamond—microwave engineering, materials science, and magnetometry. Journal of Applied Physics, 123 (16). 161101pp. doi:10.1063/1.5011231
Yamamoto, Tetsuya, Fujiwara, Yasufumi, Itoh, Kohei M. (2018) Preface to Special Topic: Defects in Semiconductors. Journal of Applied Physics, 123 (16). 161301pp. doi:10.1063/1.5036660
Hassan, Ali, Jin, Yuhua, Chao, Feng, Irfan, Muhammad, Jiang, Yijian (2018) Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films. Journal of Applied Physics, 123 (16). 161401pp. doi:10.1063/1.5003686
Radu, R., Pintilie, I., Makarenko, L. F., Fretwurst, E., Lindstroem, G. (2018) Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons. Journal of Applied Physics, 123 (16). 161402pp. doi:10.1063/1.5011372
Huo, Wenxing, Mei, Zengxia, Tang, Aihua, Liang, Huili, Du, Xiaolong (2018) Suppression of Na interstitials in Na-F codoped ZnO. Journal of Applied Physics, 123 (16). 161403pp. doi:10.1063/1.5003475
Maciaszek, Marek, Zabierowski, Paweł (2018) Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se2. Journal of Applied Physics, 123 (16). 161404pp. doi:10.1063/1.5011430
(2018) The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate. Journal of Applied Physics, 123 (16). 161405pp. doi:10.1063/1.5010849
Takatsu, J., Fuji, R., Tatebayashi, J., Timmerman, D., Lesage, A., Gregorkiewicz, T., Fujiwara, Y. (2018) Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 123 (16). 161406pp. doi:10.1063/1.5011303
Srivastava, Tulika, Bajpai, Gaurav, Rathore, Gyanendra, Liu, Shun Wei, Biring, Sajal, Sen, Somaditya (2018) Vanadium substitution: A simple and economic way to improve UV sensing in ZnO. Journal of Applied Physics, 123 (16). 161407pp. doi:10.1063/1.5012877
Varley, J. B., Lordi, V., Ogitsu, T., Deangelis, A., Horsley, K., Gaillard, N. (2018) Assessing the role of hydrogen in Fermi-level pinning in chalcopyrite and kesterite solar absorbers from first-principles calculations. Journal of Applied Physics, 123 (16). 161408pp. doi:10.1063/1.5006272
Tatebayashi, J., Yoshii, G., Nakajima, T., Kamei, H., Takatsu, J., Lebrun, D. M., Fujiwara, Y. (2018) Control of the energy transfer between Tm3+ and Yb3+ ions in Tm,Yb-codoped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition. Journal of Applied Physics, 123 (16). 161409pp. doi:10.1063/1.5011270
Farzana, Esmat, Ahmadi, Elaheh, Speck, James S., Arehart, Aaron R., Ringel, Steven A. (2018) Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics, 123 (16). 161410pp. doi:10.1063/1.5010608
Shukla, Abhishek, Bhardwaj, Abhishek K., Singh, S. C., Uttam, K. N., Gautam, Nisha, Himanshu, A. K., Shah, Jyoti, Kotnala, R. K., Gopal, R. (2018) Microwave assisted scalable synthesis of titanium ferrite nanomaterials. Journal of Applied Physics, 123 (16). 161411pp. doi:10.1063/1.5008733
Brandt, Iuri S., Tumelero, Milton A., Martins, Cesar A., Plá Cid, Cristiani C., Faccio, Ricardo, Pasa, André A. (2018) Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O. Journal of Applied Physics, 123 (16). 161412pp. doi:10.1063/1.5007052
Chichibu, S. F., Uedono, A., Kojima, K., Ikeda, H., Fujito, K., Takashima, S., Edo, M., Ueno, K., Ishibashi, S. (2018) The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN. Journal of Applied Physics, 123 (16). 161413pp. doi:10.1063/1.5012994
Krishnamurthy, S., Yu, Zhi Gang (2018) Theoretical study of native point defects in strained-layer superlattice systems. Journal of Applied Physics, 123 (16). 161414pp. doi:10.1063/1.5004176
Vaqueiro-Contreras, M., Markevich, V. P., Mullins, J., Halsall, M. P., Murin, L. I., Falster, R., Binns, J., Coutinho, J., Peaker, A. R. (2018) Lifetime degradation of n-type Czochralski silicon after hydrogenation. Journal of Applied Physics, 123 (16). 161415pp. doi:10.1063/1.5011351
Wadhwa, Payal, Kumar, Shailesh, Dhilip Kumar, T. J., Shukla, Alok, Kumar, Rakesh (2018) Effect of edge defects on band structure of zigzag graphene nanoribbons. Journal of Applied Physics, 123 (16). 161416pp. doi:10.1063/1.5011310
Hamachi, T., Takeuchi, S., Tohei, T., Imanishi, M., Imade, M., Mori, Y., Sakai, A. (2018) Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy. Journal of Applied Physics, 123 (16). 161417pp. doi:10.1063/1.5011345
Baranov, Artem I., Gudovskikh, Alexander S., Kudryashov, Dmitry A., Lazarenko, Alexandra A., Morozov, Ivan A., Mozharov, Alexey M., Nikitina, Ekaterina V., Pirogov, Evgeny V., Sobolev, Maxim S., Zelentsov, Kirill S., Egorov, Anton Yu., Darga, Arouna, Le Gall, Sylvain, Kleider, Jean-Paul (2018) Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy. Journal of Applied Physics, 123 (16). 161418pp. doi:10.1063/1.5011371
Inaba, Tomohiro, Kojima, Takanori, Yamashita, Genki, Matsubara, Eiichi, Mitchell, Brandon, Miyagawa, Reina, Eryu, Osamu, Tatebayashi, Jun, Ashida, Masaaki, Fujiwara, Yasufumi (2018) Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy. Journal of Applied Physics, 123 (16). 161419pp. doi:10.1063/1.5011283
Iyakutti, K., Lavanya, R., Rajeswarapalanichamy, R., Mathan Kumar, E., Kawazoe, Y. (2018) Theoretical insights into the minority carrier lifetime of doped Si—A computational study. Journal of Applied Physics, 123 (16). 161420pp. doi:10.1063/1.5010045
Timerkaeva, Dilyara, Attaccalite, Claudio, Brenet, Gilles, Caliste, Damien, Pochet, Pascal (2018) Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles. Journal of Applied Physics, 123 (16). 161421pp. doi:10.1063/1.5010269
Wakimoto, Hiroki, Nakazawa, Haruo, Matsumoto, Takashi, Nabetani, Yoichi (2018) Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate. Journal of Applied Physics, 123 (16). 161422pp. doi:10.1063/1.5011229
Sang, Liwen, Ren, Bing, Liao, Meiyong, Koide, Yasuo, Sumiya, Masatomo (2018) Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors. Journal of Applied Physics, 123 (16). 161423pp. doi:10.1063/1.5010952
Sagdeo, Archna, Nagwanshi, Anjali, Pokhriyal, Preeti, Sinha, A. K., Rajput, Parasmani, Mishra, Vikash, Sagdeo, P. R. (2018) Disappearance of dielectric anomaly in spite of presence of structural phase transition in reduced BaTiO3: Effect of defect states within the bandgap. Journal of Applied Physics, 123 (16). 161424pp. doi:10.1063/1.5010870
Kawai, Hiroki, Nakasaki, Yasushi, Kanemura, Takahisa, Ishihara, Takamitsu (2018) Density-functional study on the dopant-segregation mechanism: Chemical potential dependence of dopant-defect complex at Si/SiO2 interface. Journal of Applied Physics, 123 (16). 161425pp. doi:10.1063/1.5011295
Dulal Haque, Md., Kamata, Norihiko, Fukuda, Takeshi, Honda, Zentaro, Yagi, Shuhei, Yaguchi, Hiroyuki, Okada, Yoshitaka (2018) Nonradiative recombination centers in GaAs:N δ-doped superlattice revealed by two-wavelength-excited photoluminescence. Journal of Applied Physics, 123 (16). 161426pp. doi:10.1063/1.5011311
Medvedev, O., Vyvenko, O., Ubyivovk, E., Shapenkov, S., Bondarenko, A., Saring, P., Seibt, M. (2018) Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN. Journal of Applied Physics, 123 (16). 161427pp. doi:10.1063/1.5011368
Teal, Anthony, Mitchell, Bernhard, Juhl, Mattias K. (2018) Improved spatial resolution of luminescence images acquired with a silicon line scanning camera. Journal of Applied Physics, 123 (16). 161501pp. doi:10.1063/1.4986803
Musiienko, A., Grill, R., Moravec, P., Korcsmáros, G., Rejhon, M., Pekárek, J., Elhadidy, H., Šedivý, L., Vasylchenko, I. (2018) Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity. Journal of Applied Physics, 123 (16). 161502pp. doi:10.1063/1.4989481
Wang, S., Mirkhani, V., Yapabandara, K., Cheng, R., Hernandez, G., Khanal, M. P., Sultan, M. S., Uprety, S., Shen, L., Zou, S., Xu, P., Ellis, C. D., Sellers, J. A., Hamilton, M. C., Niu, G., Sk, M. H., Park, M. (2018) Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures. Journal of Applied Physics, 123 (16). 161503pp. doi:10.1063/1.4990412
Zheng, Fubao, Zhang, Qinfang, Meng, Qiangqiang, Wang, Baolin, Song, Fengqi, Yunoki, Seiji, Wang, Guanghou (2018) First-principles study of native defects in bulk Sm2CuO4 and its (001) surface structure. Journal of Applied Physics, 123 (16). 161504pp. doi:10.1063/1.4989482
Xue, Kan-Hao, Miao, Xiang-Shui (2018) Oxygen vacancy chain and conductive filament formation in hafnia. Journal of Applied Physics, 123 (16). 161505pp. doi:10.1063/1.4989621
Qin, Ying, Weiser, Philip, Villalta, Karla, Stavola, Michael, Fowler, W. Beall, Biaggio, Ivan, Boatner, Lynn (2018) Diffusivity of the interstitial hydrogen shallow donor in In2O3. Journal of Applied Physics, 123 (16). 161506pp. doi:10.1063/1.4995593
Ghosh, B., Ray, Sekhar C., Pontsho, Mbule, Sarma, Sweety, Mishra, Dilip K., Wang, Y. F., Pong, W. F., Strydom, André M. (2018) Defect induced room temperature ferromagnetism in single crystal, poly-crystal, and nanorod ZnO: A comparative study. Journal of Applied Physics, 123 (16). 161507pp. doi:10.1063/1.4986606
Dhouib, Amina, Khalfaoui, Anouar, Bouaïcha, Mongi, Yacoubi, Noureddine (2018) Investigation of thermal and optical properties on polysilicon by the photothermal deflection technique. Journal of Applied Physics, 123 (16). 161508pp. doi:10.1063/1.4986514
Rai, D. P., Ekuma, C. E., Boochani, A., Solaymani, S., Thapa, R. K. (2018) Electronic structure and x-ray spectroscopy of Cu2MnAl1–xGax. Journal of Applied Physics, 123 (16). 161509pp. doi:10.1063/1.4996650
Kordatos, A., Kelaidis, N., Chroneos, A. (2018) Defect pair formation in fluorine and nitrogen codoped TiO2. Journal of Applied Physics, 123 (16). 161510pp. doi:10.1063/1.5000025
Kaur, Milanpreet, Sawhney, Ravinder Singh, Engles, Derick (2018) Negative differential resistance observation in complex convoluted fullerene junctions. Journal of Applied Physics, 123 (16). 161511pp. doi:10.1063/1.4985796
Cevher, Z., Folkes, P. A., Hier, H. S., VanMil, B. L., Connelly, B. C., Beck, W. A., Ren, Y. H. (2018) Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures. Journal of Applied Physics, 123 (16). 161512pp. doi:10.1063/1.4986297
de Jamblinne de Meux, A., Pourtois, G., Genoe, J., Heremans, P. (2018) Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO. Journal of Applied Physics, 123 (16). 161513pp. doi:10.1063/1.4986180
Gruber, G., Cottom, J., Meszaros, R., Koch, M., Pobegen, G., Aichinger, T., Peters, D., Hadley, P. (2018) Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface. Journal of Applied Physics, 123 (16). 161514pp. doi:10.1063/1.4985856
Südkamp, T., Hamdana, G., Descoins, M., Mangelinck, D., Wasisto, H. S., Peiner, E., Bracht, H. (2018) Self-diffusion in single crystalline silicon nanowires. Journal of Applied Physics, 123 (16). 161515pp. doi:10.1063/1.4996987
Batool, Javaria, Alay-e-Abbas, Syed Muhammad, Amin, Nasir (2018) Thermodynamic, electronic, and magnetic properties of intrinsic vacancy defects in antiperovskite Ca3SnO. Journal of Applied Physics, 123 (16). 161516pp. doi:10.1063/1.4994998
Kuo, Tai-Chen, Shih, Tzu-Lang, Su, Yin-Hsien, Lee, Wen-Hsi, Current, Michael Ira, Samukawa, Seiji (2018) Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model. Journal of Applied Physics, 123 (16). 161517pp. doi:10.1063/1.4985852
URS, Kusuma, Bhat, S. V., Kamble, Vinayak (2018) On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors. Journal of Applied Physics, 123 (16). 161518pp. doi:10.1063/1.4990497
Gurieva, Galina, Valle Rios, Laura Elisa, Franz, Alexandra, Whitfield, Pamela, Schorr, Susan (2018) Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study. Journal of Applied Physics, 123 (16). 161519pp. doi:10.1063/1.4997402
Reshchikov, M. A., Albarakati, N. M., Monavarian, M., Avrutin, V., Morkoç, H. (2018) Thermal quenching of the yellow luminescence in GaN. Journal of Applied Physics, 123 (16). 161520pp. doi:10.1063/1.4995275
Kim, Honggyu, Meng, Yifei, Klem, John F., Hawkins, Samuel D., Kim, Jin K., Zuo, Jian-Min (2018) Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb. Journal of Applied Physics, 123 (16). 161521pp. doi:10.1063/1.4993673
Wichrowska, Karolina, Wosinski, Tadeusz, Tkaczyk, Zbigniew, Kolkovsky, Valery, Karczewski, Grzegorz (2018) Surface acceptor states in MBE-grown CdTe layers. Journal of Applied Physics, 123 (16). 161522pp. doi:10.1063/1.4986157
Pham, T. T., Maréchal, A., Muret, P., Eon, D., Gheeraert, E., Rouger, N., Pernot, J. (2018) Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance. Journal of Applied Physics, 123 (16). 161523pp. doi:10.1063/1.4996114
Monmeyran, Corentin, Crowe, Iain F., Gwilliam, Russell M., Heidelberger, Christopher, Napolitani, Enrico, Pastor, David, Gandhi, Hemi H., Mazur, Eric, Michel, Jürgen, Agarwal, Anuradha M., Kimerling, Lionel C. (2018) Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique. Journal of Applied Physics, 123 (16). 161524pp. doi:10.1063/1.4999210
Luo, Caiqin, Ho, Lok-Ping, Azad, Fahad, Anwand, Wolfgang, Butterling, Maik, Wagner, Andreas, Kuznetsov, Andrej, Zhu, Hai, Su, Shichen, Ling, Francis Chi-Chung (2018) Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition. Journal of Applied Physics, 123 (16). 161525pp. doi:10.1063/1.4997510
Yau, J.-B., Cai, J., Hashemi, P., Balakrishnan, K., D'Emic, C., Ning, T. H. (2018) A study of process-related electrical defects in SOI lateral bipolar transistors fabricated by ion implantation. Journal of Applied Physics, 123 (16). 161526pp. doi:10.1063/1.5001203
Saltas, V., Chroneos, A., Vallianatos, F. (2018) Thermodynamic modelling of fast dopant diffusion in Si. Journal of Applied Physics, 123 (16). 161527pp. doi:10.1063/1.5001755
Na-Phattalung, Sutassana, Limpijumnong, Sukit, Min, Chul-Hee, Cho, Deok-Yong, Lee, Seung-Ran, Char, Kookrin, Yu, Jaejun (2018) Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures. Journal of Applied Physics, 123 (16). 161528pp. doi:10.1063/1.4997356
Satoh, Motoki, Arimoto, Keisuke, Yamanaka, Junji, Sawano, Kentarou, Shiraki, Yasuhiro, Nakagawa, Kiyokazu (2018) Hole generation associated with intrinsic defects in SOI-based SiGe thin films formed by solid-source molecular beam epitaxy. Journal of Applied Physics, 123 (16). 161529pp. doi:10.1063/1.5004077
Wen, J., Wang, W. J., Chen, X. R., Li, N., Chen, X. S., Lu, W. (2018) Origin of large dark current increase in InGaAs/InP avalanche photodiode. Journal of Applied Physics, 123 (16). 161530pp. doi:10.1063/1.4999646
Joita, A. C., Nistor, S. V. (2018) Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27 MeV electrons. Journal of Applied Physics, 123 (16). 161531pp. doi:10.1063/1.4998518
Heidelberger, Christopher, Fitzgerald, Eugene A. (2018) GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain. Journal of Applied Physics, 123 (16). 161532pp. doi:10.1063/1.5001038
Kumar, Sunil, Kumar, Ashish, Tripathi, Ambuj, Tyagi, Chetna, Avasthi, D. K. (2018) Engineering of electronic properties of single layer graphene by swift heavy ion irradiation. Journal of Applied Physics, 123 (16). 161533pp. doi:10.1063/1.4991990
Ferrandis, Philippe, Billaud, Mathilde, Duvernay, Julien, Martin, Mickael, Arnoult, Alexandre, Grampeix, Helen, Cassé, Mikael, Boutry, Hervé, Baron, Thierry, Vinet, Maud, Reimbold, Gilles (2018) Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP. Journal of Applied Physics, 123 (16). 161534pp. doi:10.1063/1.5007920
Peral, Ana, Youssef, Amanda, Dastgheib-Shirazi, Amir, Akey, Austin, Peters, Ian Marius, Hahn, Giso, Buonassisi, Tonio, del Cañizo, Carlos (2018) Electrically-inactive phosphorus re-distribution during low temperature annealing. Journal of Applied Physics, 123 (16). 161535pp. doi:10.1063/1.5002627
Vigneshwara Raja, P., Narasimha Murty, N. V. L. (2018) Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes. Journal of Applied Physics, 123 (16). 161536pp. doi:10.1063/1.5003068
Huso, Jesse, Ritter, Jacob R., Thapa, Dinesh, Yu, Kin Man, Bergman, Leah, McCluskey, Matthew D. (2018) Oxygen vibrational modes in ZnS1−xOxalloys. Journal of Applied Physics, 123 (16). 161537pp. doi:10.1063/1.4998748
Shijeesh, M. R., Jayaraj, M. K. (2018) Low temperature fabrication of CuxO thin-film transistors and investigation on the origin of low field effect mobility. Journal of Applied Physics, 123 (16). 161538pp. doi:10.1063/1.4991812
Kumar, Ashish, Singh, R., Kumar, Parmod, Singh, Udai B., Asokan, K., Karaseov, Platon A., Titov, Andrei I., Kanjilal, D. (2018) In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation. Journal of Applied Physics, 123 (16). 161539pp. doi:10.1063/1.4995491
Barba, D., Wang, C., Nélis, A., Terwagne, G., Rosei, F. (2018) Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier. Journal of Applied Physics, 123 (16). 161540pp. doi:10.1063/1.5002693
Hassnain Jaffari, G., Tahir, Adnan, Ali, Naveed Zafar, Ali, Awais, Qurashi, Umar S. (2018) Effect of Cr-N codoping on structural phase transition, Raman modes, and optical properties of TiO2 nanoparticles. Journal of Applied Physics, 123 (16). 161541pp. doi:10.1063/1.5003448
Suda, Yoriko, Kamigaki, Yoshiaki, Yamamoto, Hajime (2018) Blue emission in photoluminescence spectra of the red phosphor CaAlSiN3:Eu2+ at low Eu2+ concentration. Journal of Applied Physics, 123 (16). 161542pp. doi:10.1063/1.5004481
Yakimov, Eugene B., Polyakov, Alexander Y., Lee, In-Hwan, Pearton, Stephen J. (2018) Recombination properties of dislocations in GaN. Journal of Applied Physics, 123 (16). 161543pp. doi:10.1063/1.4995580
Tu, Yi, Ruan, Yujiao, Zhu, Lihong, Tu, Qingzhen, Wang, Hongwei, Chen, Jie, Lu, Yijun, Gao, Yulin, Shih, Tien-Mo, Chen, Zhong, Lin, Yue (2018) Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature. Journal of Applied Physics, 123 (16). 161544pp. doi:10.1063/1.4989595
Poole, Violet M., Huso, Jesse, McCluskey, Matthew D. (2018) The role of hydrogen and oxygen in the persistent photoconductivity of strontium titanate. Journal of Applied Physics, 123 (16). 161545pp. doi:10.1063/1.5009596
Tatemizo, N., Imada, S., Miura, Y., Nishio, K., Isshiki, T. (2018) Crystallographic properties and electronic structure of V-doped AlN films that absorb near ultraviolet-visible-infrared light. Journal of Applied Physics, 123 (16). 161546pp. doi:10.1063/1.5004609
Willoughby, W. R., Zvanut, M. E., Paudel, Subash, Iwinska, M., Sochacki, T., Bockowski, M. (2018) A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy. Journal of Applied Physics, 123 (16). 161547pp. doi:10.1063/1.5004411
Tsuchida, Hidetsugu, Nitta, Noriko, Yanagida, Yusuke, Okumura, Yuya, Murase, Ryu (2018) Fibrous structure in GaSb surfaces irradiated with fast Cu cluster ions. Journal of Applied Physics, 123 (16). 161548pp. doi:10.1063/1.5002084
Omura, Yasuhisa, Mori, Yoshiaki, Sato, Shingo, Mallik, Abhijit (2018) Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors. Journal of Applied Physics, 123 (16). 161549pp. doi:10.1063/1.5010036
Basu, Raktima, Dhara, Sandip (2018) Spectroscopic study of native defects in the semiconductor to metal phase transition in V2O5 nanostructure. Journal of Applied Physics, 123 (16). 161550pp. doi:10.1063/1.5011112
Walde, S., Brendel, M., Zeimer, U., Brunner, F., Hagedorn, S., Weyers, M. (2018) Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors. Journal of Applied Physics, 123 (16). 161551pp. doi:10.1063/1.5010859
Barchuk, M., Holý, V., Rafaja, D. (2018) Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction. Journal of Applied Physics, 123 (16). 161552pp. doi:10.1063/1.5009521
Künneth, Christopher, Kölbl, Simon, Wagner, Hans Edwin, Häublein, Volker, Kersch, Alfred, Alt, Hans Christian (2018) Symmetry and structure of carbon-nitrogen complexes in gallium arsenide from infrared spectroscopy and first-principles calculations. Journal of Applied Physics, 123 (16). 161553pp. doi:10.1063/1.5006429
Fu, Bianzhu, Gribelyuk, Michael A. (2018) 3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis. Journal of Applied Physics, 123 (16). 161554pp. doi:10.1063/1.5010186
Zhou, Y., Ang, D. S., Kalaga, P. S. (2018) Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study. Journal of Applied Physics, 123 (16). 161555pp. doi:10.1063/1.5002606
Cherkashin, N., Daghbouj, N., Seine, G., Claverie, A. (2018) Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon. Journal of Applied Physics, 123 (16). 161556pp. doi:10.1063/1.5012505
Pishtshev, A., Rubin, P. (2018) Enhanced vibronic interaction caused by local lattice symmetry lowering in the (Fe, Mg)As2ternary system. Journal of Applied Physics, 123 (16). 161557pp. doi:10.1063/1.5010728
Rudisch, Katharina, Davydova, Alexandra, Platzer-Björkman, Charlotte, Scragg, Jonathan (2018) The effect of stoichiometry on Cu-Zn ordering kinetics in Cu2ZnSnS4 thin films. Journal of Applied Physics, 123 (16). 161558pp. doi:10.1063/1.5010081
Peaker, A. R., Markevich, V. P., Coutinho, J. (2018) Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors. Journal of Applied Physics, 123 (16). 161559pp. doi:10.1063/1.5011327
Park, Ji-Sang, Chan, Maria K. Y. (2018) Mechanism of Na accumulation at extended defects in Si from first-principles. Journal of Applied Physics, 123 (16). 161560pp. doi:10.1063/1.5003385
Stavola, Michael, Fowler, W. Beall (2018) Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra. Journal of Applied Physics, 123 (16). 161561pp. doi:10.1063/1.5011036
Koike, Kazuto, Yano, Mitsuaki, Gonda, Shun-ichi, Uedono, Akira, Ishibashi, Shoji, Kojima, Kazunobu, Chichibu, Shigefusa F. (2018) Polarity-dependence of the defect formation in c-axis oriented ZnO by the irradiation of an 8 MeV proton beam. Journal of Applied Physics, 123 (16). 161562pp. doi:10.1063/1.5010704
Shida, K., Takeuchi, S., Tohei, T., Miyake, H., Hiramatsu, K., Sumitani, K., Imai, Y., Kimura, S., Sakai, A. (2018) Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction. Journal of Applied Physics, 123 (16). 161563pp. doi:10.1063/1.5011291
Elyukhin, Vyacheslav A. (2018) Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys. Journal of Applied Physics, 123 (16). 161564pp. doi:10.1063/1.4999718
Tunhuma, S. M., Diale, M., Legodi, M. J., Nel, J. M., Thabete, T. T., Auret, F. D. (2018) Defects induced by solid state reactions at the tungsten-silicon carbide interface. Journal of Applied Physics, 123 (16). 161565pp. doi:10.1063/1.5011242
Uchitomi, Naotaka, Hidaka, Shiro, Saito, Shin, Asubar, Joel T., Toyota, Hideyuki (2018) Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration. Journal of Applied Physics, 123 (16). 161566pp. doi:10.1063/1.5007799
Pelegrini, S., Tumelero, M. A., Brandt, I. S., Della Pace, R. D., Faccio, R., Pasa, A. A. (2018) Electrodeposited Cu2O doped with Cl: Electrical and optical properties. Journal of Applied Physics, 123 (16). 161567pp. doi:10.1063/1.5004782
Park, Jinhee, Rim, You Seung, Li, Chao, Wu, Jiechen, Goorsky, Mark, Streit, Dwight (2018) Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors. Journal of Applied Physics, 123 (16). 161568pp. doi:10.1063/1.5004148
Akhtar, Shaheen, Alay-e-Abbas, Syed Muhammad, Abbas, Syed Muhammad Ghulam, Arshad, Muhammad Imran, Batool, Javaria, Amin, Nasir (2018) First-principles evaluation of electronic and optical properties of (Mo, C) codoped BaHfO3 for applications in photocatalysis. Journal of Applied Physics, 123 (16). 161569pp. doi:10.1063/1.5010969
Kanjanachuchai, Songphol, Wongpinij, Thipusa, Kijamnajsuk, Suphakan, Himwas, Chalermchai, Panyakeow, Somsak, Photongkam, Pat (2018) Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations. Journal of Applied Physics, 123 (16). 161570pp. doi:10.1063/1.5008784
Baniya, Sangita, Khanal, Dipak, Lafalce, Evan, You, Wei, Valy Vardeny, Z. (2018) Optical studies of native defects in π-conjugated donor–acceptor copolymers. Journal of Applied Physics, 123 (16). 161571pp. doi:10.1063/1.5012995
Zimmermann, C., Bonkerud, J., Herklotz, F., Sky, T. N., Hupfer, A., Monakhov, E., Svensson, B. G., Vines, L. (2018) Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2. Journal of Applied Physics, 123 (16). 161572pp. doi:10.1063/1.5011136
Olikh, O. Ya., Gorb, A. M., Chupryna, R. G., Pristay-Fenenkov, O. V. (2018) Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures. Journal of Applied Physics, 123 (16). 161573pp. doi:10.1063/1.5001123
Häusermann, Roger, Chauvin, Sophie, Facchetti, Antonio, Chen, Zhihua, Takeya, Jun, Batlogg, Bertram (2018) Probing the density of trap states in the middle of the bandgap using ambipolar organic field-effect transistors. Journal of Applied Physics, 123 (16). 161574pp. doi:10.1063/1.5011030
Ishikawa, M., Nakayama, T., Wakita, K., Shim, Y. G., Mamedov, N. (2018) First-principles study of giant thermoelectric power in incommensurate TlInSe2. Journal of Applied Physics, 123 (16). 161575pp. doi:10.1063/1.5011337
Makarenko, L. F., Lastovskii, S. B., Yakushevich, H. S., Moll, M., Pintilie, I. (2018) Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen. Journal of Applied Physics, 123 (16). 161576pp. doi:10.1063/1.5010965
Niwase, Keisuke, Terasawa, Mititaka, Honda, Shin-ichi, Niibe, Masahito, Hisakuni, Tomohiko, Iwata, Tadao, Higo, Yuji, Hirai, Takeshi, Shinmei, Toru, Ohfuji, Hiroaki, Irifune, Tetsuo (2018) Quenchable compressed graphite synthesized from neutron-irradiated highly oriented pyrolytic graphite in high pressure treatment at 1500 °C. Journal of Applied Physics, 123 (16). 161577pp. doi:10.1063/1.5011209
Guzmán, G., Escudero, R., Silva, R., Herrera, M. (2018) Influence of Ga vacancies, Mn and O impurities on the ferromagnetic properties of GaN micro- and nanostructures. Journal of Applied Physics, 123 (16). 161578pp. doi:10.1063/1.5006698
McCoy, Jedidiah J., Swain, Santosh K., Sieber, John R., Diercks, David R., Gorman, Brian P., Lynn, Kelvin G. (2018) p-type doping efficiency in CdTe: Influence of second phase formation. Journal of Applied Physics, 123 (16). 161579pp. doi:10.1063/1.5002144
Yamashita, Yoshifumi, Nakata, Ryu, Nishikawa, Takeshi, Hada, Masaki, Hayashi, Yasuhiko (2018) Expansion of Shockley stacking fault observed by scanning electron microscope and partial dislocation motion in 4H-SiC. Journal of Applied Physics, 123 (16). 161580pp. doi:10.1063/1.5010861
Shirazi-HD, M., Diaz, R. E., Nguyen, T., Jian, J., Gardner, G. C., Wang, H., Manfra, M. J., Malis, O. (2018) Kinetic instability of AlGaN alloys during MBE growth under metal-rich conditions on m-plane GaN miscut towards the -c axis. Journal of Applied Physics, 123 (16). 161581pp. doi:10.1063/1.5011413
Saito, H., Hayashi, S., Kusano, Y., Itoh, K. M., Vlasenko, M. P., Vlasenko, L. S. (2018) Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers. Journal of Applied Physics, 123 (16). 161582pp. doi:10.1063/1.5010816
Kovac, Nicola, Künneth, Christopher, Alt, Hans Christian (2018) Piezospectroscopy and first-principles calculations of the nitrogen-vacancy center in gallium arsenide. Journal of Applied Physics, 123 (16). 161583pp. doi:10.1063/1.5011302
Okumura, H., Sato, K., Kakeshita, T. (2018) Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2. Journal of Applied Physics, 123 (16). 161584pp. doi:10.1063/1.5011087
Chatterjee, Abhishek, Khamari, Shailesh K., Porwal, S., Kher, S., Sharma, T. K. (2018) Effect of 60Co γ-irradiation on the nature of electronic transport in heavily doped n-type GaN based Schottky photodetectors. Journal of Applied Physics, 123 (16). 161585pp. doi:10.1063/1.5013102
Kim, Moonyong, Chen, Daniel, Abbott, Malcolm, Nampalli, Nitin, Wenham, Stuart, Stefani, Bruno, Hallam, Brett (2018) Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect. Journal of Applied Physics, 123 (16). 161586pp. doi:10.1063/1.5000323
Michos, F. I., Sigalas, M. M. (2018) Computational study of the absorption spectrum of defected ZnS nanoparticles. Journal of Applied Physics, 123 (16). 161587pp. doi:10.1063/1.5005589
Sobolev, M. M., Soldatenkov, F. Yu., Shul'pina, I. L. (2018) Misfit dislocation–related deep levels in InGaAs/GaAs and GaAsSb/GaAs p–i–n heterostructures and the effect of these on the relaxation time of nonequilibrium carriers. Journal of Applied Physics, 123 (16). 161588pp. doi:10.1063/1.5011297
Krammel, C. M., Nattermann, L., Sterzer, E., Volz, K., Koenraad, P. M. (2018) Structural and electronic properties of isovalent boron atoms in GaAs. Journal of Applied Physics, 123 (16). 161589pp. doi:10.1063/1.5011166
Schauer, F., Nádaždy, V., Gmucová, K. (2018) Electrochemical impedance spectroscopy for study of electronic structure in disordered organic semiconductors—Possibilities and limitations. Journal of Applied Physics, 123 (16). 161590pp. doi:10.1063/1.5008830
Maeda, Susumu, Sudo, Haruo, Okamura, Hideyuki, Nakamura, Kozo, Sueoka, Koji, Izunome, Koji (2018) Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation. Journal of Applied Physics, 123 (16). 161591pp. doi:10.1063/1.5011243
Hayashi, S., Saito, H., Itoh, K. M., Vlasenko, M. P., Vlasenko, L. S. (2018) Electron spin resonance identification di-carbon-related centers in irradiated silicon. Journal of Applied Physics, 123 (16). 161592pp. doi:10.1063/1.5010234
Kajikawa, Y., Nishigaichi, M., Tenma, S., Kato, K., Katsube, S. (2018) Effects of a GaSb buffer layer on an InGaAs overlayer grown on Ge(111) substrates: Strain, twin generation, and surface roughness. Journal of Applied Physics, 123 (16). 161593pp. doi:10.1063/1.5011075
Gusakova, Julia, Gusakov, Vasilii, Tay, Beng Kang (2018) DFT study of structural and electronic properties of MoS2(1−x)Se2x alloy (x = 0.25). Journal of Applied Physics, 123 (16). 161594pp. doi:10.1063/1.5011326
Khirunenko, L. I., Sosnin, M. G., Duvanskii, A. V., Abrosimov, N. V., Riemann, H. (2018) Divacancy-tin related defects in irradiated germanium. Journal of Applied Physics, 123 (16). 161595pp. doi:10.1063/1.5010422
Schmeißer, Dieter, Henkel, Karsten (2018) Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3. Journal of Applied Physics, 123 (16). 161596pp. doi:10.1063/1.5010740
Capan, Ivana, Brodar, Tomislav, Pastuović, Željko, Siegele, Rainer, Ohshima, Takeshi, Sato, Shin-ichiro, Makino, Takahiro, Snoj, Luka, Radulović, Vladimir, Coutinho, José, Torres, Vitor J. B., Demmouche, Kamel (2018) Double negatively charged carbon vacancy at the h- and k-sites in 4H-SiC: Combined Laplace-DLTS and DFT study. Journal of Applied Physics, 123 (16). 161597pp. doi:10.1063/1.5011124
Derbenyova, Natalia V., Burdov, Vladimir A. (2018) Radiative decay rates in Si crystallites with a donor ion. Journal of Applied Physics, 123 (16). 161598pp. doi:10.1063/1.5011382
Wu, Kongping, Liao, Meiyong, Sang, Liwen, Liu, Jiangwei, Imura, Masataka, Ye, Haitao, Koide, Yasuo (2018) A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface. Journal of Applied Physics, 123 (16). 161599pp. doi:10.1063/1.5002176
Lee, Soonil, Ahn, Jaehyun, Mathew, Leo, Rao, Rajesh, Zhang, Zhongjian, Kim, Jae Hyun, Banerjee, Sanjay K., Yu, Edward T. (2018) Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer. Journal of Applied Physics, 123 (16). 163101pp. doi:10.1063/1.5023000
Wang, Guangxu, Deng, Jia, Guo, Xing (2018) Electrohydrodynamic assisted droplet alignment for lens fabrication by droplet evaporation. Journal of Applied Physics, 123 (16). 163102pp. doi:10.1063/1.5024630
Riaby, V., Masherov, P., Savinov, V., Yakunin, V. (2018) Method for reducing measurement errors of a Langmuir probe with a protective RF shield. Journal of Applied Physics, 123 (16). 163301pp. doi:10.1063/1.5019400
Fuji, Yoshihiko, Higashi, Yoshihiro, Masunishi, Kei, Yuzawa, Akiko, Nagata, Tomohiko, Kaji, Shiori, Okamoto, Kazuaki, Baba, Shotaro, Ono, Tomio, Hara, Michiko (2018) Spin-MEMS microphone integrating a series of magnetic tunnel junctions on a rectangular diaphragm. Journal of Applied Physics, 123 (16). 163901pp. doi:10.1063/1.5023756
Materlik, Robin, Künneth, Christopher, Falkowski, Max, Mikolajick, Thomas, Kersch, Alfred (2018) Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study. Journal of Applied Physics, 123 (16). 164101pp. doi:10.1063/1.5021746
Li, Shiyang, Sun, Enwei, Tang, Liguo, Zheng, Limei, Yang, Ming, Han, Tao, Cao, Wenwu (2018) Temperature dependence of full matrix material constants of [001]c poled 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 single crystal. Journal of Applied Physics, 123 (16). 164102pp. doi:10.1063/1.5011218
Singh, Anar, Moriyoshi, Chikako, Kuroiwa, Yoshihiro, Pandey, Dhananjai (2018) Anomalous atomic displacement parameters and local dynamics in the Curie range of a Pb-free relaxor ferroelectric system (Bi1-xBax)(Fe1-xTix)O3(0.36 ≤ x ≤ 0.50). Journal of Applied Physics, 123 (16). 164103pp. doi:10.1063/1.5023726
Gao, Xiaobo, Li, Yu Xiao (2018) Ultra-fast AC electro-osmotic micropump with arrays of asymmetric ring electrode pairs in 3D cylindrical microchannel. Journal of Applied Physics, 123 (16). 164301pp. doi:10.1063/1.5016168
Bi, Zhaoxia, Ek, Martin, Stankevic, Tomas, Colvin, Jovana, Hjort, Martin, Lindgren, David, Lenrick, Filip, Johansson, Jonas, Wallenberg, L. Reine, Timm, Rainer, Feidenhans'l, Robert, Mikkelsen, Anders, Borgström, Magnus T., Gustafsson, Anders, Ohlsson, B. Jonas, Monemar, Bo, Samuelson, Lars (2018) Self-assembled InN quantum dots on side facets of GaN nanowires. Journal of Applied Physics, 123 (16). 164302pp. doi:10.1063/1.5022756
Fernández, Julio J. (2018) Endoreversible model of thermal to radiative energy converters. Journal of Applied Physics, 123 (16). 164501pp. doi:10.1063/1.5018184
Henderson, Brian S., Lee, Hin Y., MacDonald, Thomas D., Nelson, Roberts G., Danagoulian, Areg (2018) Experimental demonstration of multiple monoenergetic gamma radiography for effective atomic number identification in cargo inspection. Journal of Applied Physics, 123 (16). 164901pp. doi:10.1063/1.5025805
Pastor, David, Gandhi, Hemi H., Monmeyran, Corentin P., Akey, Austin J., Milazzo, Ruggero, Cai, Yan, Napolitani, Enrico, Gwilliam, Russell M., Crowe, Iain F., Michel, Jurgen, Kimerling, L. C., Agarwal, Anuradha, Mazur, Eric, Aziz, Michael J. (2018) High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting. Journal of Applied Physics, 123 (16). 165101pp. doi:10.1063/1.5012512
He, Shenglai, Covington, Cody, Varga, Kálmán (2018) Study of local currents in low dimension materials using complex injecting potentials. Journal of Applied Physics, 123 (16). 165102pp. doi:10.1063/1.5023349
Shakya, Jyoti, Kumar, Sanjeev, Mohanty, Tanuja (2018) Role of oxygen adsorption in modification of optical and surface electronic properties of MoS2. Journal of Applied Physics, 123 (16). 165103pp. doi:10.1063/1.5023022
Turkoglu, F., Koseoglu, H., Zeybek, S., Ozdemir, M., Aygun, G., Ozyuzer, L. (2018) Effect of substrate rotation speed and off-center deposition on the structural, optical, and electrical properties of AZO thin films fabricated by DC magnetron sputtering. Journal of Applied Physics, 123 (16). 165104pp. doi:10.1063/1.5012883
Cheng, Hao-Yu, Yang, Chi-Yuan, Yang, Li-Chueh, Peng, Kun-Cheng, Chia, Chih-Ta, Liu, Shiu-Jen, Lin, I-Nan, Lin, Kung-Hsuan (2018) Effective thermal and mechanical properties of polycrystalline diamond films. Journal of Applied Physics, 123 (16). 165105pp. doi:10.1063/1.5016919
Singh, Chetan C., Panda, Emila (2018) Zinc interstitial threshold in Al-doped ZnO film: Effect on microstructure and optoelectronic properties. Journal of Applied Physics, 123 (16). 165106pp. doi:10.1063/1.5021736
Tarighi Ahmadpour, Mahdi, Rostamnejadi, Ali, Hashemifar, S. Javad (2018) Optical properties of body-centered tetragonal C4: Insights from many-body perturbation and time-dependent density functional theories. Journal of Applied Physics, 123 (16). 165107pp. doi:10.1063/1.5001999
Bardhan, Abheek, Mohan, Nagaboopathy, Chandrasekar, Hareesh, Ghosh, Priyadarshini, Sridhara Rao, D. V., Raghavan, Srinivasan (2018) The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth. Journal of Applied Physics, 123 (16). 165108pp. doi:10.1063/1.5005080
Dang, Thien Thanh, Schell, Juliana, Lupascu, Doru C., Vianden, Reiner (2018) Dynamic quadrupole interactions in semiconductors. Journal of Applied Physics, 123 (16). 165109pp. doi:10.1063/1.4993714
Elofsson, V., Almyras, G. A., Lü, B., Garbrecht, M., Boyd, R. D., Sarakinos, K. (2018) Structure formation in Ag-X (X = Au, Cu) alloys synthesized far-from-equilibrium. Journal of Applied Physics, 123 (16). 165301pp. doi:10.1063/1.5018907
Smagina, Zh. V., Zinovyev, V. A., Rudin, S. A., Novikov, P. L., Rodyakina, E. E., Dvurechenskii, A. V. (2018) Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography. Journal of Applied Physics, 123 (16). 165302pp. doi:10.1063/1.5009154
Khmelinskii, Igor, Makarov, Vladimir I. (2018) Nonlinear optical effects in a three-nanolayer metal sandwich assembly. Journal of Applied Physics, 123 (16). 165303pp. doi:10.1063/1.5022331
Zhou, Weijian, Wu, Bin, Muhammad, , Du, Qiujiao, Huang, Guoliang, Lü, Chaofeng, Chen, Weiqiu (2018) Actively tunable transverse waves in soft membrane-type acoustic metamaterials. Journal of Applied Physics, 123 (16). 165304pp. doi:10.1063/1.5015979
Yamanaka, Soichiro, Hayakawa, Kei, Cojocaru, Ludmila, Tsuruta, Ryohei, Sato, Tomoya, Mase, Kazuhiko, Uchida, Satoshi, Nakayama, Yasuo (2018) Electronic structures and chemical states of methylammonium lead triiodide thin films and the impact of annealing and moisture exposure. Journal of Applied Physics, 123 (16). 165501pp. doi:10.1063/1.5023871
Mukherjee, K., Reilly, C. H., Callahan, P. G., Seward, G. G. E. (2018) Recombination activity of threading dislocations in GaInP influenced by growth temperature. Journal of Applied Physics, 123 (16). 165701pp. doi:10.1063/1.5018849
Dong, H. M., Han, F. W., Duan, Y. F., Huang, F., Liu, J. L. (2018) Nonlinear optical transmittance of semiconductors in the presence of high-intensity radiation fields. Journal of Applied Physics, 123 (16). 165702pp. doi:10.1063/1.5021280
Drichko, I. L., Dmitriev, A. A., Malysh, V. A., Smirnov, I. Yu., von Känel, H., Kummer, M., Chrastina, D., Isella, G. (2018) Effective g factor of 2D holes in strained Ge quantum wells. Journal of Applied Physics, 123 (16). 165703pp. doi:10.1063/1.5025413
Charoonsuk, T., Vittayakorn, N., Kolodiazhnyi, T. (2018) Disorder-induced f-electron localization in Nb and Y co-doped CeO2. Journal of Applied Physics, 123 (16). 165704pp. doi:10.1063/1.5022386
Barragan-Yani, D., Albe, K. (2018) Influence of Na and Ga on the electrical properties of perfect 60° dislocations in Cu(In, Ga)Se2 thin-film photovoltaic absorbers. Journal of Applied Physics, 123 (16). 165705pp. doi:10.1063/1.5026483
Yang, Jiangcheng, Fares, Chaker, Ren, F., Sharma, Ribhu, Patrick, Erin, Law, Mark E., Pearton, S. J., Kuramata, Akito (2018) Effects of fluorine incorporation into β-Ga2O3. Journal of Applied Physics, 123 (16). 165706pp. doi:10.1063/1.5031001
Dmitriev, A. V. (2018) High doping effect on the thermoelectric properties of p-type lead telluride. Journal of Applied Physics, 123 (16). 165707pp. doi:10.1063/1.5025766
Li, Y., Zhou, X. M., Cai, Y., Liu, C. L., Luo, S. N. (2018) Birefringence and incipient plastic deformation in elastically overdriven [100] CaF2 under shock compression. Journal of Applied Physics, 123 (16). 165901pp. doi:10.1063/1.5023064
Stewart, J. A., Brookman, G., Price, P., Franco, M., Ji, W., Hattar, K., Dingreville, R. (2018) Characterizing single isolated radiation-damage events from molecular dynamics via virtual diffraction methods. Journal of Applied Physics, 123 (16). 165902pp. doi:10.1063/1.5022471

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