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Chater, R.J., Kilner, J.A., Hemment, P.L.F., Reeson, K.J., Davis, J.R. (1987) The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 290-293 doi:10.1016/s0168-583x(87)80059-9

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Reference TypeJournal (article/letter/editorial)
TitleThe evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsChater, R.J.Author
Kilner, J.A.Author
Hemment, P.L.F.Author
Reeson, K.J.Author
Davis, J.R.Author
Year1987 (January)Volume19
PublisherElsevier BV
DOIdoi:10.1016/s0168-583x(87)80059-9Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5587689Long-form Identifiermindat:1:5:5587689:6
GUID0
Full ReferenceChater, R.J., Kilner, J.A., Hemment, P.L.F., Reeson, K.J., Davis, J.R. (1987) The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 290-293 doi:10.1016/s0168-583x(87)80059-9
Plain TextChater, R.J., Kilner, J.A., Hemment, P.L.F., Reeson, K.J., Davis, J.R. (1987) The evolution of the Si/SiO2 interface in buried oxide layers formed by high dose oxygen implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 19. 290-293 doi:10.1016/s0168-583x(87)80059-9
In(1987) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 19. Elsevier BV

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Kilner, J.A., Chater, R.J., Hemment, P.L.F., Peart, R.F., Reeson, K.J., Arrowsmith, R.P., Davis, J.R. (1986) SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 15 (1). 214-217 doi:10.1016/0168-583x(86)90288-0
Griffin, C.J., Kilner, J.A., Chater, R.J., Staton-Bevan, A., Reeson, K.J., Hemment, P.L.F., Davis, J.R. (1989) A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 215-219 doi:10.1016/0168-583x(89)90774-x
Chater, R.J., Kilner, J.A., Reeson, K.J., Robinson, A.K., Hemment, P.L.F. (1991) High-dose oxygen implantation into silica. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 686-690 doi:10.1016/0168-583x(91)96258-m
Kilner, J.A., Chater, R.J., Reeson, K.J., Hemment, P.L.F., Davis, J.R. (1989) Nitrogen-15 isotope tracer studies of buried nitride layer formation by high dose implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1). 225-229 doi:10.1016/0168-583x(89)90776-3
Hemment, P.L.F., Reeson, K.J., Robinson, A.K., Kilner, J.A., Chater, R.J., Marsh, C.D., Christensen, K.N., Davis, J.R. (1989) Nonplanar and noncontinuous buried layers of SiO2 in silicon formed by ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 766-769 doi:10.1016/0168-583x(89)90294-2
Chater, R.J., Kilner, J.A., Reeson, K.J., Robinson, A.K., Hemment, P.L.F. (1990) 18O isotope studies on the redistribution of oxygen in noncontinuous buried layers formed by high-dose oxygen ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 45 (1). 110-114 doi:10.1016/0168-583x(90)90796-w
Hemment, P.L.F., Reeson, K.J., Kilner, J.A., Chater, R.J., Marsh, C., Booker, G.R., Davis, J.R., Celler, G.K. (1987) Novel dielectric/silicon planar structures formed by ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 129-133 doi:10.1016/0168-583x(87)90811-1
Chater, R.J., Kilner, J.A., Scheid, E., Cristoloveneau, S., Hemment, P.L.F., Reeson, K.J. (1987) Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation. Applied Surface Science, 30. 390-396 doi:10.1016/0169-4332(87)90116-4
Reeson, K.J., Hemment, P.L.F., Meekison, C.D., Marsh, C.D., Booker, G.R., Chater, R.J., Kilner, J.A., Davis, J. (1988) Buried layers of silicon oxy-nitride fabricated using ion beam synthesis. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 32 (1). 427-432 doi:10.1016/0168-583x(88)90250-9
Kilner, J.A., Chater, R.J., Hemment, P.L.F., Peart, R.F., Maydell-Ondrusz, E.A., Taylor, M.R., Arrowsmith, R.P. (1985) SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 7. 293-298 doi:10.1016/0168-583x(85)90568-3
Barklie, R.C., Ennis, T.J., Reeson, K.J., Hemment, P.L.F. (1992) E'1 centres in buried oxide layers formed by oxygen ion implantation into silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 65 (1). 93-96 doi:10.1016/0168-583x(92)95019-n
 
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