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Thayer, R.Bruce (1987) XP series high current ion implantation systems for up to 200 mm wafer processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 245-250 doi:10.1016/0168-583x(87)90836-6

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Reference TypeJournal (article/letter/editorial)
TitleXP series high current ion implantation systems for up to 200 mm wafer processing
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsThayer, R.BruceAuthor
Year1987 (January)Volume21
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(87)90836-6Search in ResearchGate
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Mindat Ref. ID5588096Long-form Identifiermindat:1:5:5588096:9
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Full ReferenceThayer, R.Bruce (1987) XP series high current ion implantation systems for up to 200 mm wafer processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 245-250 doi:10.1016/0168-583x(87)90836-6
Plain TextThayer, R.Bruce (1987) XP series high current ion implantation systems for up to 200 mm wafer processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 245-250 doi:10.1016/0168-583x(87)90836-6
In(1987, January) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 21 (1) Elsevier BV

See Also

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Benveniste, V. (1987) Wafer cooling in a high current ion implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 366-371 doi:10.1016/0168-583x(87)90858-5
Sakudo, N. (1987) Microwave ion source for ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 168-177 doi:10.1016/0168-583x(87)90819-6
Brown, Ian, Washburn, Jack (1987) The MEVVA ion source for high current metal ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 201-204 doi:10.1016/0168-583x(87)90826-3
Harris, M. (1991) Advances in the Extrion 1000 and XP Series high-current ion implantation systems. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 428-433 doi:10.1016/0168-583x(91)96206-z
Eddy, R., Long, A., Smith, S., Tkach, J. (1987) Improvements in dose uniformity on high current ion implantation systems. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 424-427 doi:10.1016/0168-583x(87)90870-6
Basra, Vijay K., McKenna, Charles M., Felch, Susan B. (1987) A study of wafer and device charging during high current ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 360-365 doi:10.1016/0168-583x(87)90857-3
Seidel, T.E. (1987) CMOS process review with implications for ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 96-103 doi:10.1016/0168-583x(87)90805-6
Outcault, R., McKenna, C., Robertson, T., Biondo, L. (1987) A new computer designed faraday system for high current ion implantation systems. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 354-359 doi:10.1016/0168-583x(87)90856-1
Wonson, C., Thompson, T. (1987) Intelligent performance optimization for a fully automatic high current ion implantation system. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 523-525 doi:10.1016/0168-583x(87)90896-2
McGuire, Edward (1987) 0.1% ultra-uniformity in electrostatically scanned ion implantation systems. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 431-432 doi:10.1016/0168-583x(87)90872-x
Taylor, C., Splinter, P., Weed, A., Grant, J., Holden, S. (1987) 200 mm end station for ion beam implanters. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 224-228 doi:10.1016/0168-583x(87)90832-9
 
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