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Said, Jumana, Ghibaudo, Gérard, Stoemenos, Iannis, Zaumseil, Peter (1991) Thermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 576-579 doi:10.1016/0168-583x(91)96234-c

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Reference TypeJournal (article/letter/editorial)
TitleThermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsSaid, JumanaAuthor
Ghibaudo, GérardAuthor
Stoemenos, IannisAuthor
Zaumseil, PeterAuthor
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96234-cSearch in ResearchGate
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Mindat Ref. ID5596437Long-form Identifiermindat:1:5:5596437:7
GUID0
Full ReferenceSaid, Jumana, Ghibaudo, Gérard, Stoemenos, Iannis, Zaumseil, Peter (1991) Thermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 576-579 doi:10.1016/0168-583x(91)96234-c
Plain TextSaid, Jumana, Ghibaudo, Gérard, Stoemenos, Iannis, Zaumseil, Peter (1991) Thermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 576-579 doi:10.1016/0168-583x(91)96234-c
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Prins, Johan F. (1991) Annealing effects when activating dopant atoms in ion-implanted diamond layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1387-1390 doi:10.1016/0168-583x(91)95837-4
Kuriyama, K., Tsugita, M., Hayashi, N. (1991) Structural and electrical properties of Si layers implanted with various Ge ion doses. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1116-1119 doi:10.1016/0168-583x(91)95778-c
Tang, Y.S., Sealy, B.J. (1991) Electrical activation process of erbium implanted in silicon and SIMOX. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 647-649 doi:10.1016/0168-583x(91)96250-o
Svensson, B.G., Mohadjeri, B. (1991) Isotope effects for ion-implantation profiles in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 650-654 doi:10.1016/0168-583x(91)96251-f
Shen, Honglie, Yang, Genqing, Zhou, Zuyao, Zou, Shichang (1991) Rapid thermal annealing of Mg+ and P+ dually implanted InP. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 798-801 doi:10.1016/0168-583x(91)96283-q
Grötzschel, R., Kagadey, V.A., Lebedeva, N.I., Proskurovsky, D.I. (1991) Sublimation and diffusion of arsenic implanted into silicon at rapid electron beam annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 573-575 doi:10.1016/0168-583x(91)96233-b
Hill, Chris, Hunt, Peter (1991) Ion implantation in bipolar technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 1-8 doi:10.1016/0168-583x(91)96125-5
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96122-2
Anjum, M., Sandhu, G.S., Cherekdjian, S., Weisenberger, W. (1991) Thermal wave characterization of silicon implanted with MeV phosphorus ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 266-268 doi:10.1016/0168-583x(91)96175-k
Zhong-Lie, Wang, Bo-Xu, Zhang (1991) MeV ion-beam induced crystallization in high energy As+ ion-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 439-443 doi:10.1016/0168-583x(91)95255-c
Thornton, R.P., Li, Y.H., Elliman, R.G., Williams, J.S. (1991) The annealing behaviour of ion-implanted Si studied using time-resolved reflectivity. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 598-601 doi:10.1016/0168-583x(91)96239-h
 
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