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Nakashima, S., Izumi, K. (1991) SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 847-851 doi:10.1016/0168-583x(91)96291-r

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Reference TypeJournal (article/letter/editorial)
TitleSIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsNakashima, S.Author
Izumi, K.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96291-rSearch in ResearchGate
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Mindat Ref. ID5596552Long-form Identifiermindat:1:5:5596552:5
GUID0
Full ReferenceNakashima, S., Izumi, K. (1991) SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 847-851 doi:10.1016/0168-583x(91)96291-r
Plain TextNakashima, S., Izumi, K. (1991) SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 847-851 doi:10.1016/0168-583x(91)96291-r
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

See Also

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Izumi, K., Omura, Y., Nakashima, S. (1989) Modification of a 100-mA-class high-current oxygen implanter and its application to ultrathin film MOSFET/SIMOX. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 37. 299-303 doi:10.1016/0168-583x(89)90190-0
Sinclair, Frank (1991) Simulation of the geometrical characteristics of a mechanically scanned high current implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 482-487 doi:10.1016/0168-583x(91)96217-9
Moffatt, S. (1987) A 100 mA class ion implanter for large scale production of buried oxide SOI wafers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 251-257 doi:10.1016/0168-583x(87)90837-8
Felch, S.B., Mehta, S., Kikuchi, S., Kitahara, S. (1991) Device charge-to-breakdown studies on a high-current implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 82-85 doi:10.1016/0168-583x(91)96140-g
Ruffell, John P., Douglas-Hamilton, D.H., Kaim, R.E., Izumi, K. (1987) A high current, high voltage oxygen ion implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 21 (1). 229-234 doi:10.1016/0168-583x(87)90833-0
Kato, K., Takai, M., Namba, S., Schork, R., Ryssel, H. (1991) Raman measurement of local SOI structure by SIMOX. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 710-713 doi:10.1016/0168-583x(91)96263-k
Taylor, M.C., Mehta, S., Eddy, R.J. (1991) A detailed study of elemental contamination in a Varian 180XP high-current implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 20-24 doi:10.1016/0168-583x(91)96128-8
Wittkower, A., Guerra, M., Cordts, B., Dolan, R., Sandow, P. (1991) Contouring of SIMOX profiles by oxygen ion energy change. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 842-846 doi:10.1016/0168-583x(91)96290-2
Mihara, Y., Niikura, K., Tsukakoshi, O., Sakurada, Y. (1991) Parallel beam ion implanter: IPX-7000. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 417-422 doi:10.1016/0168-583x(91)96204-x
Pippins, Michael W. (1991) A system and performance overview of the EXTRION 220 medium-current ion implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 423-427 doi:10.1016/0168-583x(91)96205-y
Cherekdjian, S., Weisenberger, W. (1991) Daily 2 Γ— 1012 monitoring of an ion implanter. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 178-182 doi:10.1016/0168-583x(91)96157-g
 
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