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Molle, P., Jaussaud, C., Bruel, M. (1991) Nitrogen implantation for local oxidation (NILO) of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 860-865 doi:10.1016/0168-583x(91)96294-u

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Reference TypeJournal (article/letter/editorial)
TitleNitrogen implantation for local oxidation (NILO) of silicon
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsMolle, P.Author
Jaussaud, C.Author
Bruel, M.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96294-uSearch in ResearchGate
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Mindat Ref. ID5596558Long-form Identifiermindat:1:5:5596558:9
GUID0
Full ReferenceMolle, P., Jaussaud, C., Bruel, M. (1991) Nitrogen implantation for local oxidation (NILO) of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 860-865 doi:10.1016/0168-583x(91)96294-u
Plain TextMolle, P., Jaussaud, C., Bruel, M. (1991) Nitrogen implantation for local oxidation (NILO) of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 860-865 doi:10.1016/0168-583x(91)96294-u
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Svensson, B.G., Mohadjeri, B. (1991) Isotope effects for ion-implantation profiles in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 650-654 doi:10.1016/0168-583x(91)96251-f
Hatzopoulos, N., Bussmann, U., Robinson, A.K., Hemment, P.L.F. (1991) Buried insulator formation by nitrogen implantation at elevated temperatures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 734-737 doi:10.1016/0168-583x(91)96268-p
Hazdra, P., Has̆lar, V., Bartos̆, M. (1991) The influence of implantation temperature and subsequent annealing on residual implantation defects in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 637-641 doi:10.1016/0168-583x(91)96248-j
Seidel, Thomas E. (1991) Implantation in the 1990s. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 17-19 doi:10.1016/0168-583x(91)96127-7
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96122-2
Vyatkin, A.F., Simonov, V.V., Kholopkin, A.I. (1991) Development of ion implantation equipment in the USSR. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 386-392 doi:10.1016/0168-583x(91)96199-u
Hill, Chris, Hunt, Peter (1991) Ion implantation in bipolar technology. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 1-8 doi:10.1016/0168-583x(91)96125-5
Stephens, K.G. (1991) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96123-3
Holmes, A.J.T., Proudfoot, G. (1991) Negative-ion sources for ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 323-327 doi:10.1016/0168-583x(91)96186-o
Cheung, Nathan W. (1991) Plasma immersion ion implantation for ULSI processing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 811-820 doi:10.1016/0168-583x(91)96285-s
Spinelli, P., Biasse, B., Jaussaud, C., De Pontcharra, J., Soubie, A., Bruel, M. (1985) In-depth spreading resistance characterization of buried insulating layers synthesized by high dose implantation of nitrogen or oxygen ions. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 10. 501-505 doi:10.1016/0168-583x(85)90296-4
 
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