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Bocchi, C, Ferrari, C (1995) A study of thin buried layers in IIl-V compound heterostructures by high-resolution X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/032

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Reference TypeJournal (article/letter/editorial)
TitleA study of thin buried layers in IIl-V compound heterostructures by high-resolution X-ray diffraction
JournalJournal of Physics D: Applied Physics
AuthorsBocchi, CAuthor
Ferrari, CAuthor
Year1995 (April 14)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/0022-3727/28/4a/032Search in ResearchGate
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Mindat Ref. ID5665800Long-form Identifiermindat:1:5:5665800:2
GUID0
Full ReferenceBocchi, C, Ferrari, C (1995) A study of thin buried layers in IIl-V compound heterostructures by high-resolution X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/032
Plain TextBocchi, C, Ferrari, C (1995) A study of thin buried layers in IIl-V compound heterostructures by high-resolution X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/032
In(1995) Journal of Physics D: Applied Physics Vol. 28. IOP Publishing

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Attolini, G, Bocchi, C, Franzosi, P, Korytar, D, Pelosi, C (1995) An X-ray diffraction study of the lattice strain relaxation in MOVPE GaAs/Ge heterostructures. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/025
Francesio, L, Franzosi, P, Landgren, G (1995) A high-resolution X-ray diffraction study in InGaAs/InP superlattices. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/033
Iberl, A, Gobel, H, Heinecke, H (1995) Characterization of Ill-V heterostructures grown by selective-area epitaxy using double-crystal X-ray diffractometry with high lateral resolution. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/034
Wolf, K, Jilka, S, Rosenauer, A, Schutz, G, Stanzl, H, Reisinger, T, Gebhardt, W (1995) High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/023
Novikov, D V, Ohler, M, Kohler, R, Materlik, G (1995) Observation of defects in crystal surface layers by grazing-incidence diffraction X-ray topography. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/016
Gartstein, E, Khait, Y, Richter, V (1995) An X-ray diffraction study of implantation damage in InSb reduced by a magnetic field. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/057
Punegov, V I, Vishnjakov, Y V (1995) Dynamical theory of X-ray diffraction from damaged epitaxial layers with constant strain gradient. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/036
Ishikawa, T (1995) High-resolution X-ray optics for third-generation synchrotron radiation. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/050
Jergel, M, Holy, V, Majkova, E, Luby, S, Senderak, R (1995) Interface study of W-Si/Si and obliquely deposited W/Si multilayers by grazing-incidence high-resolution X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/047
Rose, D, Pietsch, U, Gottschalch, V, Rhan, H (1995) Investigation of InAs single quantum wells buried in GaAs(001) using grazing incidence X-ray diffraction. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/048
Iberl, A, Schuster, M, Gobel, H, Meyer, A, Baur, B, Matz, R, Snigirev, A, Snigireva, I, Freund, A, Lengeler, B, Heinecke, H (1995) Micro-focus double-crystal X-ray diffractometry on IIl-V heterostructures grown by selective-area epitaxy. Journal of Physics D: Applied Physics, 28. doi:10.1088/0022-3727/28/4a/039
 
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