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Cheng, Zhi-Qun, Hu, Sha, Liu, Jun, Zhang, Qi-Jun (2011) Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network. Chinese Physics B, 20. 36106pp. doi:10.1088/1674-1056/20/3/036106

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Reference TypeJournal (article/letter/editorial)
TitleNovel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network
JournalChinese Physics B
AuthorsCheng, Zhi-QunAuthor
Hu, ShaAuthor
Liu, JunAuthor
Zhang, Qi-JunAuthor
Year2011 (March)Volume20
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/20/3/036106Search in ResearchGate
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Mindat Ref. ID6001252Long-form Identifiermindat:1:5:6001252:6
GUID0
Full ReferenceCheng, Zhi-Qun, Hu, Sha, Liu, Jun, Zhang, Qi-Jun (2011) Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network. Chinese Physics B, 20. 36106pp. doi:10.1088/1674-1056/20/3/036106
Plain TextCheng, Zhi-Qun, Hu, Sha, Liu, Jun, Zhang, Qi-Jun (2011) Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network. Chinese Physics B, 20. 36106pp. doi:10.1088/1674-1056/20/3/036106
In(n.d.) Chinese Physics B Vol. 20. IOP Publishing

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