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Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Lardizabal, M. C., Craford, M. G., Robbins, V. M. (1990) High performance AlGaInP visible light‐emitting diodes. Applied Physics Letters, 57 (27). 2937-2939 doi:10.1063/1.103736

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Reference TypeJournal (article/letter/editorial)
TitleHigh performance AlGaInP visible light‐emitting diodes
JournalApplied Physics Letters
AuthorsKuo, C. P.Author
Fletcher, R. M.Author
Osentowski, T. D.Author
Lardizabal, M. C.Author
Craford, M. G.Author
Robbins, V. M.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103736Search in ResearchGate
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Mindat Ref. ID8492739Long-form Identifiermindat:1:5:8492739:4
GUID0
Full ReferenceKuo, C. P., Fletcher, R. M., Osentowski, T. D., Lardizabal, M. C., Craford, M. G., Robbins, V. M. (1990) High performance AlGaInP visible light‐emitting diodes. Applied Physics Letters, 57 (27). 2937-2939 doi:10.1063/1.103736
Plain TextKuo, C. P., Fletcher, R. M., Osentowski, T. D., Lardizabal, M. C., Craford, M. G., Robbins, V. M. (1990) High performance AlGaInP visible light‐emitting diodes. Applied Physics Letters, 57 (27). 2937-2939 doi:10.1063/1.103736
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Huang, K. H., Yu, J. G., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Stinson, L. J., Craford, M. G., Liao, A. S. H. (1992) Twofold efficiency improvement in high performance AlGaInP light‐emitting diodes in the 555–620 nm spectral region using a thick GaP window layer. Applied Physics Letters, 61 (9). 1045-1047 doi:10.1063/1.107711
Kish, F. A., Steranka, F. M., DeFevere, D. C., Vanderwater, D. A., Park, K. G., Kuo, C. P., Osentowski, T. D., Peanasky, M. J., Yu, J. G., Fletcher, R. M., Steigerwald, D. A., Craford, M. G., Robbins, V. M. (1994) Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes. Applied Physics Letters, 64 (21). 2839-2841 doi:10.1063/1.111442
Kish, F. A., Caracci, S. J., Holonyak, N., Dallesasse, J. M., Sugg, A. R., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1991) Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes. Applied Physics Letters, 59 (3). 354-356 doi:10.1063/1.105593
Dallesasse, J. M., El‐Zein, N., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1990) Hydrogenation‐defined stripe‐geometry In0.5(AlxGa1−x)0.5P quantum‐well lasers. Journal of Applied Physics, 68 (11). 5871-5873 doi:10.1063/1.346962
Deppe, D. G., Nam, D. W., Holonyak, N., Hsieh, K. C., Baker, J. E., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Impurity‐induced layer disordering of high gap Iny(AlxGa1−x)1−yP heterostructures. Applied Physics Letters, 52 (17). 1413-1415 doi:10.1063/1.99132
Nam, D. W., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1989) Photopumped phonon‐assisted laser operation (77 K) of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 54 (24). 2446-2448 doi:10.1063/1.101067
Kish, F. A., Caracci, S. J., Maranowski, S. A., Holonyak, N., Hsieh, K. C., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1992) Planar native‐oxide buried‐mesa AlxGa1−xAs‐In0.5(AlyGa1−y)0.5P‐ In0.5(AlzGa1−z)0.5P visible‐spectrum laser diodes. Journal of Applied Physics, 71 (6). 2521-2525 doi:10.1063/1.351067
Deppe, D. G., Plano, W. E., Baker, J. E., Holonyak, N., Ludowise, M. J., Kuo, C. P., Fletcher, R. M., Osentowski, T. D., Craford, M. G. (1988) Comparison of SiIII‐SiVand SiIII‐VIIIdiffusion models in III‐V heterostructures lattice matched to GaAs. Applied Physics Letters, 53 (22). 2211-2213 doi:10.1063/1.100284
Dallesasse, J. M., Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (≲6400 Å) room‐temperature continuous operation ofp‐nIn0.5(AlxGa1−x)0.5P quantum well lasers. Applied Physics Letters, 53 (19). 1826-1828 doi:10.1063/1.100388
Nam, D. W., Deppe, D. G., Holonyak, N., Fletcher, R. M., Kuo, C. P., Osentowski, T. D., Craford, M. G. (1988) Short‐wavelength (∼625 nm) room‐temperature continuous laser operation of In0.5(AlxGa1−x)0.5P quantum well heterostructures. Applied Physics Letters, 52 (16). 1329-1331 doi:10.1063/1.99149
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