Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284

Library Home Bookshelves View by Type Using Search

Books Catalogs/Sales Lists Journals Reports Thesis/Dissertation

Search for Books Search for Journals Manage Subjects Statistics Books without DDC/LCC Top Unstructured Orphaned Articles

Bookshelves (DDC layout)Bookshelves (LCC layout)Latest Books

Advanced

Search inside 'Applied Physics ...' only

- Only viewable:

Reference Type	Journal (article/letter/editorial)
Title	Electron accumulation layer at the Cs-covered GaN(0001) n-type surface
Journal	Applied Physics Letters
Authors	Benemanskaya, G. V.		Author
	Vikhnin, V. S.		Author
	Shmidt, N. M.		Author
	Frank-Kamenetskaya, G. E.		Author
	Afanasiev, I. V.		Author
Year	2004 (August 23)	Volume	85
Issue	8
Publisher	AIP Publishing
DOI	doi:10.1063/1.1785284Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8541671	Long-form Identifier	mindat:1:5:8541671:6
GUID	0
Full Reference	Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284
Plain Text	Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284
In	(2004, August) Applied Physics Letters Vol. 85 (8) AIP Publishing

	Benemanskaya, G. V., Frank-Kamentskaya, G. E., Shmidt, N. M., Dunaevskiĭ, M. S. (2006) Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces. Journal of Experimental and Theoretical Physics, 103 (3). 441-448 doi:10.1134/s1063776106090147
	Benemanskaya, G. V., Lapushkin, M. N., Timoshnev, S. N. (2007) Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties. Physics of the Solid State, 49. 646-650 doi:10.1134/s1063783407040075
	Benemanskaya, G. V., Timoshnev, S. N., Ivanov, S. V., Frank-Kamenetskaya, G. E., Marchenko, D. E., Iluridze, G. N. (2014) Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces. Journal of Experimental and Theoretical Physics, 118 (4). 600-610 doi:10.1134/s1063776114040098
	Benemanskaya, G. V., Lapushkin, M. N., Marchenko, D. E., Timoshnev, S. N. (2018) The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface. Technical Physics Letters, 44. 247-250 doi:10.1134/s106378501803015x
	Vikhnin, V S, Benemanskaya, G V, Shmidt, N M, Sacharov, A V (2005) Polaron-related states in the photoluminescence of gallium nitride crystal. Journal of Physics: Conference Series, 21. 227-231 doi:10.1088/1742-6596/21/1/038
	Andronov, A. N., Daineka, D. V., Benemanskaya, G. V., Frank-Kamenetskaya, G. É. (1997) Electronic structure and adsorption properties of the system Cs/O/W(110). Physics of the Solid State, 39. 1502-1505 doi:10.1134/1.1130107
	Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. E. (1998) Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region. Surface Review and Letters, 5 (1). 91-95 doi:10.1142/s0218625x98000190
	Benemanskaya, G. V., Zhmerik, V. N., Lapushkin, M. N., Timoshnev, S. N. (2009) Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces. Physics of the Solid State, 51. 395-399 doi:10.1134/s1063783409020310
	Emtsev, V. V., Zavarin, E. E., Oganesyan, G. A., Petrov, V. N., Sakharov, A. V., Shmidt, N. M., V’yuginov, V. N., Zybin, A. A., Parnes, Ya. M., Vidyakin, S. I., Gudkov, A. G., Chernyakov, A. E. (2016) The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial. Technical Physics Letters, 42. 701-703 doi:10.1134/s1063785016070075
	Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2001) The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters. Journal of Experimental and Theoretical Physics, 92 (2). 297-303 doi:10.1134/1.1354687
	Benemanskaya, G. V., Besyul’kin, A. I., Dunaevskii, M. S., Kryzhanovskii, A. K., Shmidt, N. M. (2003) Thermal stability of GaN epilayers with different degrees of mosaic structure order. Physics of the Solid State, 45. 1026-1029 doi:10.1134/1.1583784

Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 06:49:02

Go to top of page

Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284

See Also