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Benemanskaya, G. V., Frank-Kamentskaya, G. E., Shmidt, N. M., Dunaevskiĭ, M. S. (2006) Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces. Journal of Experimental and Theoretical Physics, 103 (3). 441-448 doi:10.1134/s1063776106090147

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Reference TypeJournal (article/letter/editorial)
TitleCharge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces
JournalJournal of Experimental and Theoretical Physics
AuthorsBenemanskaya, G. V.Author
Frank-Kamentskaya, G. E.Author
Shmidt, N. M.Author
Dunaevskiĭ, M. S.Author
Year2006 (September)Volume103
Issue3
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063776106090147Search in ResearchGate
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Mindat Ref. ID9040629Long-form Identifiermindat:1:5:9040629:0
GUID0
Full ReferenceBenemanskaya, G. V., Frank-Kamentskaya, G. E., Shmidt, N. M., Dunaevskiĭ, M. S. (2006) Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces. Journal of Experimental and Theoretical Physics, 103 (3). 441-448 doi:10.1134/s1063776106090147
Plain TextBenemanskaya, G. V., Frank-Kamentskaya, G. E., Shmidt, N. M., Dunaevskiĭ, M. S. (2006) Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces. Journal of Experimental and Theoretical Physics, 103 (3). 441-448 doi:10.1134/s1063776106090147
In(2006, September) Journal of Experimental and Theoretical Physics Vol. 103 (3) Pleiades Publishing Ltd

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Benemanskaya, G. V., Lapushkin, M. N., Timoshnev, S. N. (2007) Charge accumulation layer in Cs,Ba/n-GaN(0001) ultrathin interfaces: Electronic and photoemission properties. Physics of the Solid State, 49. 646-650 doi:10.1134/s1063783407040075
Benemanskaya, G. V., Timoshnev, S. N., Ivanov, S. V., Frank-Kamenetskaya, G. E., Marchenko, D. E., Iluridze, G. N. (2014) Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces. Journal of Experimental and Theoretical Physics, 118 (4). 600-610 doi:10.1134/s1063776114040098
Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284
Benemanskaya, G. V., Zhmerik, V. N., Lapushkin, M. N., Timoshnev, S. N. (2009) Charge accumulation nanolayer: A 2D electronic channel in Cs/n-InGaN ultrathin interfaces. Physics of the Solid State, 51. 395-399 doi:10.1134/s1063783409020310
Benemanskaya, G. V., Lapushkin, M. N., Marchenko, D. E., Timoshnev, S. N. (2018) The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface. Technical Physics Letters, 44. 247-250 doi:10.1134/s106378501803015x
Benemanskaya, G. V., Timoshnev, S. N. (2023) Electronic Structure of Ultrathin Cs/Bi2Se3 Interfaces. Technical Physics Letters, 49. doi:10.1134/s1063785023010108
Benemanskaya, G.V., Lapushkin, M.N., Timoshnev, S.N. (2009) Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface. Surface Science, 603 (16). 2474-2478 doi:10.1016/j.susc.2009.05.022
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (1998) Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers. Journal of Experimental and Theoretical Physics, 87 (6). 1167-1171 doi:10.1134/1.558608
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2001) The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters. Journal of Experimental and Theoretical Physics, 92 (2). 297-303 doi:10.1134/1.1354687
Benemanskaya, G. V., Besyul’kin, A. I., Dunaevskii, M. S., Kryzhanovskii, A. K., Shmidt, N. M. (2003) Thermal stability of GaN epilayers with different degrees of mosaic structure order. Physics of the Solid State, 45. 1026-1029 doi:10.1134/1.1583784
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. E. (1998) Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region. Surface Review and Letters, 5 (1). 91-95 doi:10.1142/s0218625x98000190
 
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