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Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2001) The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters. Journal of Experimental and Theoretical Physics, 92 (2). 297-303 doi:10.1134/1.1354687

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Reference TypeJournal (article/letter/editorial)
TitleThe electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters
JournalJournal of Experimental and Theoretical Physics
AuthorsBenemanskaya, G. V.Author
Daineka, D. V.Author
Frank-Kamenetskaya, G. É.Author
Year2001 (February)Volume92
Issue2
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/1.1354687Search in ResearchGate
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Mindat Ref. ID9039207Long-form Identifiermindat:1:5:9039207:6
GUID0
Full ReferenceBenemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2001) The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters. Journal of Experimental and Theoretical Physics, 92 (2). 297-303 doi:10.1134/1.1354687
Plain TextBenemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2001) The electronic properties of the Cs/GaAs(100) interface and the formation of metastable Cs clusters. Journal of Experimental and Theoretical Physics, 92 (2). 297-303 doi:10.1134/1.1354687
In(2001, February) Journal of Experimental and Theoretical Physics Vol. 92 (2) Pleiades Publishing Ltd

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Andronov, A. N., Daineka, D. V., Benemanskaya, G. V., Frank-Kamenetskaya, G. É. (1997) Electronic structure and adsorption properties of the system Cs/O/W(110). Physics of the Solid State, 39. 1502-1505 doi:10.1134/1.1130107
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (1998) Electronic structure and local interactions on a S(100) 2×1 surface with submonolayer Ba overlayers. Journal of Experimental and Theoretical Physics, 87 (6). 1167-1171 doi:10.1134/1.558608
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. É. (2002) Variation of the electronic and adsorption properties of GaAs(100) in the transition from an As-to Ga-rich surface. Physics of the Solid State, 44. 989-993 doi:10.1134/1.1477504
Benemanskaya, G. V., Daineka, D. V., Frank-Kamenetskaya, G. E. (1998) Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region. Surface Review and Letters, 5 (1). 91-95 doi:10.1142/s0218625x98000190
Benemanskaya, G. V., Evtikhiev, V. P., Frank-Kamenetskaya, G. É. (2000) Electronic properties of cesium ultrathin coatings on the Ga-rich GaAs(100) surface. Physics of the Solid State, 42. 366-370 doi:10.1134/1.1131214
Benemanskaya, G V, Daineka, D V, Frank-Kamenetskaya, G E (1999) Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface. Journal of Physics: Condensed Matter, 11 (35). 6679-6684 doi:10.1088/0953-8984/11/35/306
Benemanskaya, G.V., Daineka, D.V., Frank-Kamenetskaya, G.E. (2003) Changes in electronic and adsorption properties under Cs adsorption on GaAs in the transition from As-rich to Ga-rich surface. Surface Science, 523 (3). 211-217 doi:10.1016/s0039-6028(02)02357-9
Benemanskaya, G. V., Timoshnev, S. N., Ivanov, S. V., Frank-Kamenetskaya, G. E., Marchenko, D. E., Iluridze, G. N. (2014) Modification of the electronic structure and formation of an accumulation layer in ultrathin Ba/n-GaN and Ba/n-AlGaN interfaces. Journal of Experimental and Theoretical Physics, 118 (4). 600-610 doi:10.1134/s1063776114040098
Benemanskaya, G. V., Lapushkin, M. N., Marchenko, D. E., Timoshnev, S. N. (2018) The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface. Technical Physics Letters, 44. 247-250 doi:10.1134/s106378501803015x
Benemanskaya, G. V., Vikhnin, V. S., Shmidt, N. M., Frank-Kamenetskaya, G. E., Afanasiev, I. V. (2004) Electron accumulation layer at the Cs-covered GaN(0001) n-type surface. Applied Physics Letters, 85 (8). 1365-1367 doi:10.1063/1.1785284
Benemanskaya, G. V., Frank-Kamentskaya, G. E., Shmidt, N. M., Dunaevskiĭ, M. S. (2006) Charge accumulation layers and surface states in ultrathin Cs,Ba/n-GaN(0001) interfaces. Journal of Experimental and Theoretical Physics, 103 (3). 441-448 doi:10.1134/s1063776106090147
 
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