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Laha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209

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Reference TypeJournal (article/letter/editorial)
TitleImpact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application
JournalApplied Physics Letters
AuthorsLaha, ApurbaAuthor
Osten, H. J.Author
Fissel, A.Author
Year2006 (October 2)Volume89
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.2360209Search in ResearchGate
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Mindat Ref. ID8549932Long-form Identifiermindat:1:5:8549932:0
GUID0
Full ReferenceLaha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
Plain TextLaha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
In(2006, October) Applied Physics Letters Vol. 89 (14) AIP Publishing

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Laha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
Laha, Apurba, Fissel, A., Osten, H. J. (2010) Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates. Applied Physics Letters, 96 (7). 72903pp. doi:10.1063/1.3318260
Laha, Apurba, Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A., Osten, H. J. (2008) Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films. Applied Physics Letters, 93 (18). 182907pp. doi:10.1063/1.3009206
Laha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104
Czernohorsky, M., Bugiel, E., Osten, H. J., Fissel, A., Kirfel, O. (2006) Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001). Applied Physics Letters, 88 (15). 152905pp. doi:10.1063/1.2194227
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Erratum: “Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application” [Appl. Phys. Lett. 88, 172107 (2006)]. Applied Physics Letters, 89 (13). 139901pp. doi:10.1063/1.2354313
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application. Applied Physics Letters, 88 (17). 172107pp. doi:10.1063/1.2198518
Ghosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422
Sun, Qing-Qing, Laha, Apurba, Ding, Shi-Jin, Zhang, David Wei, Osten, H. Jörg, Fissel, A. (2008) Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100). Applied Physics Letters, 92 (15). 152908pp. doi:10.1063/1.2912523
Badylevich, M., Shamuilia, S., Afanas’ev, V. V., Stesmans, A., Laha, A., Osten, H. J., Fissel, A. (2007) Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations. Applied Physics Letters, 90 (25). 252101pp. doi:10.1063/1.2746419
Chaudhuri, Ayan Roy, Fissel, A., Osten, H. J. (2015) Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)]. Applied Physics Letters, 106 (14). 149903pp. doi:10.1063/1.4917251
 
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