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Laha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104

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Reference TypeJournal (article/letter/editorial)
TitleImpact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties
JournalApplied Physics Letters
AuthorsLaha, ApurbaAuthor
Ai, B.Author
Babu, P. R. P.Author
Fissel, A.Author
Osten, H. J.Author
Year2011 (October 10)Volume99
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.3646104Search in ResearchGate
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Mindat Ref. ID8596523Long-form Identifiermindat:1:5:8596523:0
GUID0
Full ReferenceLaha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104
Plain TextLaha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104
In(2011, October) Applied Physics Letters Vol. 99 (15) AIP Publishing

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Laha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
Laha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
Laha, Apurba, Fissel, A., Osten, H. J. (2010) Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates. Applied Physics Letters, 96 (7). 72903pp. doi:10.1063/1.3318260
Laha, Apurba, Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A., Osten, H. J. (2008) Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films. Applied Physics Letters, 93 (18). 182907pp. doi:10.1063/1.3009206
Ghosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422
Roy Chaudhuri, Ayan, Fissel, A., Archakam, V. R., Osten, H. J. (2013) Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied Physics Letters, 102 (2). 22904pp. doi:10.1063/1.4775688
Czernohorsky, M., Bugiel, E., Osten, H. J., Fissel, A., Kirfel, O. (2006) Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si(001). Applied Physics Letters, 88 (15). 152905pp. doi:10.1063/1.2194227
Laha, Apurba, Fissel, A., Osten, H. J. (2013) Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon. Applied Physics Letters, 102 (20). 202902pp. doi:10.1063/1.4807588
Roy Chaudhuri, Ayan, Fissel, A., Osten, H. J. (2013) Investigation of band offsets and direct current leakage properties of nitrogen doped epitaxial Gd2O3 thin films on Si. Journal of Applied Physics, 113 (18). 184108pp. doi:10.1063/1.4804245
Sun, Qing-Qing, Laha, Apurba, Ding, Shi-Jin, Zhang, David Wei, Osten, H. Jörg, Fissel, A. (2008) Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100). Applied Physics Letters, 92 (15). 152908pp. doi:10.1063/1.2912523
Chaudhuri, Ayan Roy, Fissel, A., Osten, H. J. (2015) Erratum: “Superior dielectric properties for template assisted grown (100) oriented Gd2O3 thin films on Si(100)” [Appl. Phys. Lett. 104, 012906 (2014)]. Applied Physics Letters, 106 (14). 149903pp. doi:10.1063/1.4917251
 
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