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Ghosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application
JournalApplied Physics Letters
AuthorsGhosh, KankatAuthor
Das, SudiptaAuthor
Fissel, A.Author
Osten, H. J.Author
Laha, ApurbaAuthor
Year2013 (October 7)Volume103
Issue15
PublisherAIP Publishing
DOIdoi:10.1063/1.4824422Search in ResearchGate
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Mindat Ref. ID8617063Long-form Identifiermindat:1:5:8617063:5
GUID0
Full ReferenceGhosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422
Plain TextGhosh, Kankat, Das, Sudipta, Fissel, A., Osten, H. J., Laha, Apurba (2013) Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application. Applied Physics Letters, 103 (15). 153501pp. doi:10.1063/1.4824422
In(2013, October) Applied Physics Letters Vol. 103 (15) AIP Publishing

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Laha, Apurba, Fissel, A., Osten, H. J. (2013) Effective control on flat band voltage of epitaxial lanthanide oxide based metal oxide semiconductor capacitors by interfacial carbon. Applied Physics Letters, 102 (20). 202902pp. doi:10.1063/1.4807588
Ghosh, Kankat, Das, S, Khiangte, K R, Choudhury, N, Laha, Apurba (2017) Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power application. Journal of Physics D: Applied Physics, 50. 475102pp. doi:10.1088/1361-6463/aa8e7d
Laha, Apurba, Osten, H. J., Fissel, A. (2007) Influence of interface layer composition on the electrical properties of epitaxial Gd2O3 thin films for high-K application. Applied Physics Letters, 90 (11). 113508pp. doi:10.1063/1.2713142
Laha, Apurba, Osten, H. J., Fissel, A. (2006) Impact of Si substrate orientations on electrical properties of crystalline Gd2O3 thin films for high-K application. Applied Physics Letters, 89 (14). 143514pp. doi:10.1063/1.2360209
Laha, Apurba, Ai, B., Babu, P. R. P., Fissel, A., Osten, H. J. (2011) Impact of carbon incorporation into epitaxial Gd2O3 thin films on silicon: An experimental study on electrical properties. Applied Physics Letters, 99 (15). 152902pp. doi:10.1063/1.3646104
Laha, Apurba, Fissel, A., Osten, H. J. (2010) Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates. Applied Physics Letters, 96 (7). 72903pp. doi:10.1063/1.3318260
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application. Applied Physics Letters, 88 (17). 172107pp. doi:10.1063/1.2198518
Laha, Apurba, Bugiel, E., Wang, J. X., Sun, Q. Q., Fissel, A., Osten, H. J. (2008) Effect of domain boundaries on the electrical properties of crystalline Gd2O3 thin films. Applied Physics Letters, 93 (18). 182907pp. doi:10.1063/1.3009206
Laha, Apurba, Bugiel, E., Osten, H. J., Fissel, A. (2006) Erratum: “Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1nm for high-K application” [Appl. Phys. Lett. 88, 172107 (2006)]. Applied Physics Letters, 89 (13). 139901pp. doi:10.1063/1.2354313
Sun, Qing-Qing, Laha, Apurba, Ding, Shi-Jin, Zhang, David Wei, Osten, H. Jörg, Fissel, A. (2008) Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100). Applied Physics Letters, 92 (15). 152908pp. doi:10.1063/1.2912523
Roy Chaudhuri, Ayan, Fissel, A., Archakam, V. R., Osten, H. J. (2013) Improving dielectric properties of epitaxial Gd2O3 thin films on silicon by nitrogen doping. Applied Physics Letters, 102 (2). 22904pp. doi:10.1063/1.4775688
 
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