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Lau, W. S., Yang, Peizhen, Chen, T. P., Siah, S. Y., Chan, L. (2010) Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification. Applied Physics Letters, 97 (13). 133508pp. doi:10.1063/1.3489381

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Reference TypeJournal (article/letter/editorial)
TitlePhysics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification
JournalApplied Physics Letters
AuthorsLau, W. S.Author
Yang, PeizhenAuthor
Chen, T. P.Author
Siah, S. Y.Author
Chan, L.Author
Year2010 (September 27)Volume97
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3489381Search in ResearchGate
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Mindat Ref. ID8586782Long-form Identifiermindat:1:5:8586782:2
GUID0
Full ReferenceLau, W. S., Yang, Peizhen, Chen, T. P., Siah, S. Y., Chan, L. (2010) Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification. Applied Physics Letters, 97 (13). 133508pp. doi:10.1063/1.3489381
Plain TextLau, W. S., Yang, Peizhen, Chen, T. P., Siah, S. Y., Chan, L. (2010) Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification. Applied Physics Letters, 97 (13). 133508pp. doi:10.1063/1.3489381
In(2010, September) Applied Physics Letters Vol. 97 (13) AIP Publishing

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Yang, Peizhen, Lau, W. S., Ho, V., Lim, B. K., Siah, S. Y., Chan, L. (2008) Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors. Applied Physics Letters, 93 (3). 33501pp. doi:10.1063/1.2952494
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