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Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1996) Atomic structure analysis of the interfaces inSi/Ge superlattices. Applied Surface Science, 100. 503-507 doi:10.1016/0169-4332(96)00328-5

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Reference TypeJournal (article/letter/editorial)
TitleAtomic structure analysis of the interfaces inSi/Ge superlattices
JournalApplied Surface Science
AuthorsSumitomo, KojiAuthor
Nishioka, TakashiAuthor
Ogino, ToshioAuthor
Year1996 (July)Volume100
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00328-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9898509Long-form Identifiermindat:1:5:9898509:4
GUID0
Full ReferenceSumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1996) Atomic structure analysis of the interfaces inSi/Ge superlattices. Applied Surface Science, 100. 503-507 doi:10.1016/0169-4332(96)00328-5
Plain TextSumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1996) Atomic structure analysis of the interfaces inSi/Ge superlattices. Applied Surface Science, 100. 503-507 doi:10.1016/0169-4332(96)00328-5
In(n.d.) Applied Surface Science Vol. 100. Elsevier BV

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Sumitomo, Koji, Yamaguchi, Hiroshi, Hirota, Yukihiro, Nishioka, Takashi, Ogino, Toshio (1996) Structure analysis of the GaAs(001)-2 Γ— 4 surface using medium energy ion scattering. Surface Science, 355 (1). doi:10.1016/0039-6028(96)00624-3
Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1998) Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering. Applied Surface Science, 130. 133-138 doi:10.1016/s0169-4332(98)00039-7
Prabhakaran, K., Ogino, T. (1996) Behavior of ultrathin layers of Co on Si and Ge systems. Applied Surface Science, 100. 518-521 doi:10.1016/0169-4332(96)00331-5
Kobayashi, Yoshihiro, Ogino, Toshio (1996) Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structure. Applied Surface Science, 100. 407-411 doi:10.1016/0169-4332(96)00309-1
Nakamura, Jun, Zhang, Zhaohui, Sumitomo, Koji, Omi, Hiroo, Ogino, Toshio, Natori, Akiko (2003) Structural stability of the Ge/Si(1 1 3)-2Γ—2 surface. Applied Surface Science, 212. 724-729 doi:10.1016/s0169-4332(03)00374-x
Prabhakaran, Kuniyil, Nishioka, Takashi, Sumitomo, Koji, Kobayashi, Yoshihiro, Ogino, Toshio (1994) Oxidation of Ultrathin SiGe Layer on Si(001): Evidence for Inward Movement of Ge. Japanese Journal of Applied Physics, 33. 1837-1838 doi:10.1143/jjap.33.1837
Kobayashi, Yoshihiro, Sumitomo, Koji, Shiraishi, Kenji, Urisu, Tuneo, Ogino, Toshio (1999) Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation. Surface Science, 436 (1). 9-14 doi:10.1016/s0039-6028(99)00689-5
Takeuchi, Toshio, Kore-eda, Toshinori, Ebina, Atsuko (1996) Surface barriers formation mechanism of the chemically etched CdTe(111) polar surfaces and gold interfaces. Applied Surface Science, 100. 596-600 doi:10.1016/0169-4332(96)00346-7
Sumitomo, Koji, Lin, Feng, Homma, Yoshikazu, Ogino, Toshio (2004) Selective formation of Ge nanostructures on Si(1 1 1) surface with patterned steps. Applied Surface Science, 237. 68-74 doi:10.1016/j.apsusc.2004.06.130
Suntola, Tuomo (1996) Surface chemistry of materials deposition at atomic layer level. Applied Surface Science, 100. 391-398 doi:10.1016/0169-4332(96)00306-6
Tserbak, C., Theodorou, G. (1996) Direct gap Si/Ge superlattices strained along the [110] and [111] directions. Applied Surface Science, 102. 288-292 doi:10.1016/0169-4332(96)00066-9
 
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