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Prabhakaran, K., Ogino, T. (1996) Behavior of ultrathin layers of Co on Si and Ge systems. Applied Surface Science, 100. 518-521 doi:10.1016/0169-4332(96)00331-5

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Reference TypeJournal (article/letter/editorial)
TitleBehavior of ultrathin layers of Co on Si and Ge systems
JournalApplied Surface Science
AuthorsPrabhakaran, K.Author
Ogino, T.Author
Year1996 (July)Volume100
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(96)00331-5Search in ResearchGate
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Mindat Ref. ID9898512Long-form Identifiermindat:1:5:9898512:8
GUID0
Full ReferencePrabhakaran, K., Ogino, T. (1996) Behavior of ultrathin layers of Co on Si and Ge systems. Applied Surface Science, 100. 518-521 doi:10.1016/0169-4332(96)00331-5
Plain TextPrabhakaran, K., Ogino, T. (1996) Behavior of ultrathin layers of Co on Si and Ge systems. Applied Surface Science, 100. 518-521 doi:10.1016/0169-4332(96)00331-5
In(n.d.) Applied Surface Science Vol. 100. Elsevier BV

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Prabhakaran, K., Nishioka, T., Kobayashi, Y., Ogino, T. (1994) In situ oxidation of ultrathin layers of Ge on Si(001): evidence for bonding partner exchange. Applied Surface Science, 75. 341-347 doi:10.1016/0169-4332(94)90181-3
Prabhakaran, K, Sumitomo, K, Ogino, T (2000) Nano-interface engineering of Co/Ge/Si systems: metal incorporation into Ge quantum dots and SiO2/Si structures. Applied Surface Science, 159. 492-497 doi:10.1016/s0169-4332(00)00058-1
Sumitomo, Koji, Nishioka, Takashi, Ogino, Toshio (1996) Atomic structure analysis of the interfaces inSi/Ge superlattices. Applied Surface Science, 100. 503-507 doi:10.1016/0169-4332(96)00328-5
Prabhakaran, K., Sumitomo, K., Ogino, T. (1996) Diffusion mediated chemical reaction in Co/Ge/Si(100) forming Ge/CoSi2/Si(100). Applied Physics Letters, 68 (9). 1241-1243 doi:10.1063/1.115939
Prabhakaran, K., Watanabe, Y., Nath, K.G., Homma, Y., Ogino, T., Shafi, K.V.P.M., Ulman, A. (2003) Surface chemistry of Fe2O3 nanoparticles on ultrathin oxide layers on Si and Ge. Surface Science, 545 (3). 191-198 doi:10.1016/j.susc.2003.08.049
Hibino, H., Ogino, T. (1994) Scanning tunneling microscopy observations of Ge solid-phase epitaxy on Si(111). Applied Surface Science, 82. 374-379 doi:10.1016/0169-4332(94)90244-5
Inanaga, K., Nakahata, T., Furukawa, T., Ono, K. (1996) Initial stage of oxidation of Si(100) surfaces in dry oxygen. Applied Surface Science, 100. 421-424 doi:10.1016/0169-4332(96)00312-1
Ruby, C., Fusy, J. (1996) Oxidation of ultrathin iron layers grown on Cu(111). Applied Surface Science, 99. 393-400 doi:10.1016/0169-4332(96)00460-6
Motta, N., Sgarlata, A., De Crescenzi, M., Derrien, J. (1996) STM studies of Geî—¸Si thin layers epitaxially grown on Si(111). Applied Surface Science, 102. 57-61 doi:10.1016/0169-4332(96)00019-0
Yoshitake, M., Yoshihara, K. (1996) Effect of gas adsorption on the segregation behavior of substrate Cu on Ti film. Applied Surface Science, 100. 203-206 doi:10.1016/0169-4332(96)00287-5
Kobayashi, Yoshihiro, Ogino, Toshio (1996) Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structure. Applied Surface Science, 100. 407-411 doi:10.1016/0169-4332(96)00309-1
 
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