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Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4

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Reference TypeJournal (article/letter/editorial)
TitleScanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation
JournalApplied Surface Science
AuthorsNegoro, NoboruAuthor
Fujikura, HajimeAuthor
Hasegawa, HidekiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00054-4Search in ResearchGate
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Mindat Ref. ID9901894Long-form Identifiermindat:1:5:9901894:6
GUID0
Full ReferenceNegoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
Plain TextNegoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Negoro, Noboru, Kasai, Seiya, Hasegawa, Hideki (2002) Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4) surfaces. Applied Surface Science, 190. 269-274 doi:10.1016/s0169-4332(01)00865-0
Shiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4
Anantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
Takahashi, Hiroshi, Hasegawa, Hideki (2000) In situ UHV contactless C–V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer. Applied Surface Science, 166. 526-531 doi:10.1016/s0169-4332(00)00487-6
Hashizume, Tamotsu, Ikeya, Kengo, Mutoh, Morimichi, Hasegawa, Hideki (1998) Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation. Applied Surface Science, 123. 599-602 doi:10.1016/s0169-4332(97)00576-x
Kasai, Seiya, Negoro, Noboru, Hasegawa, Hideki (2001) Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (0 0 1) surfaces of III–V compound semiconductors. Applied Surface Science, 175. 255-259 doi:10.1016/s0169-4332(01)00093-9
Anantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0
Anantathanasarn, Sanguan, Hasegawa, Hideki (2002) Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer. Applied Surface Science, 190. 343-347 doi:10.1016/s0169-4332(01)00840-6
Hasegawa, Hideki, Kodama, Satoshi, Ikeya, Kengo, Fujikura, Hajime (1997) Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology. Applied Surface Science, 117. 710-713 doi:10.1016/s0169-4332(97)80169-9
Ohmori, Kenji, Zaima, Shigeaki, Yasuda, Yukio (2000) Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy. Applied Surface Science, 162. 395-400 doi:10.1016/s0169-4332(00)00222-1
Hasegawa, Shigehiko, Arakawa, Katsuhito, Oooka, Hiroki, Nakashima, Hisao (2000) Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy. Applied Surface Science, 162. 430-434 doi:10.1016/s0169-4332(00)00228-2
 
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