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Anantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5

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Reference TypeJournal (article/letter/editorial)
TitleSurface passivation of GaAs by ultra-thin cubic GaN layer
JournalApplied Surface Science
AuthorsAnantathanasarn, SanguanAuthor
Ootomo, Shin-yaAuthor
Hashizume, TamotsuAuthor
Hasegawa, HidekiAuthor
Year2000 (June)Volume159
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(00)00077-5Search in ResearchGate
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Mindat Ref. ID9901917Long-form Identifiermindat:1:5:9901917:6
GUID0
Full ReferenceAnantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
Plain TextAnantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
In(n.d.) Applied Surface Science Vol. 159. Elsevier BV

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Anantathanasarn, Sanguan, Hasegawa, Hideki (2002) Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer. Applied Surface Science, 190. 343-347 doi:10.1016/s0169-4332(01)00840-6
Shiozaki, Nanako, Anantathanasarn, Sanguan, Sato, Taketomo, Hashizume, Tamotsu, Hasegawa, Hideki (2005) Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation. Applied Surface Science, 244. 71-74 doi:10.1016/j.apsusc.2004.10.067
Hashizume, Tamotsu, Ikeya, Kengo, Mutoh, Morimichi, Hasegawa, Hideki (1998) Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation. Applied Surface Science, 123. 599-602 doi:10.1016/s0169-4332(97)00576-x
Anantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0
Shiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4
Oyama, Susumu, Hashizume, Tamotsu, Hasegawa, Hideki (2002) Mechanism of current leakage through metal/n-GaN interfaces. Applied Surface Science, 190. 322-325 doi:10.1016/s0169-4332(01)00902-3
Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
Inagaki, Takanori, Hashizume, Tamotsu, Hasegawa, Hideki (2003) Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure. Applied Surface Science, 216. 519-525 doi:10.1016/s0169-4332(03)00482-3
Hashizume, Tamotsu, Anantathanasarn, Sanguan, Negoro, Noboru, Sano, Eiichi, Hasegawa, Hideki, Kumakura, Kazuhide, Makimoto, Toshiki (2004) Al2O3Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers. Japanese Journal of Applied Physics, 43. doi:10.1143/jjap.43.l777
Takahashi, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki (1998) Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer. Applied Surface Science, 123. 615-618 doi:10.1016/s0169-4332(97)00577-1
Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma. Japanese Journal of Applied Physics, 39. 2407-2413 doi:10.1143/jjap.39.2407
 
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