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Anantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0

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Reference TypeJournal (article/letter/editorial)
TitlePinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface
JournalApplied Surface Science
AuthorsAnantathanasarn, SanguanAuthor
Hasegawa, HidekiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00383-0Search in ResearchGate
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Mindat Ref. ID9905259Long-form Identifiermindat:1:5:9905259:7
GUID0
Full ReferenceAnantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0
Plain TextAnantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Anantathanasarn, Sanguan, Hasegawa, Hideki (2002) Photoluminescence and capacitance–voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer. Applied Surface Science, 190. 343-347 doi:10.1016/s0169-4332(01)00840-6
Anantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
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Miyazaki, Seiichi, Narasaki, Masahiro, Suyama, Atushi, Yamaoka, Masanori, Murakami, Hideki (2003) Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0). Applied Surface Science, 216. 252-257 doi:10.1016/s0169-4332(03)00377-5
Negoro, Noboru, Fujikura, Hajime, Hasegawa, Hideki (2000) Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001) GaAs for surface passivation. Applied Surface Science, 159. 292-300 doi:10.1016/s0169-4332(00)00054-4
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Li, Y.G, Wee, A.T.S, Huan, C.H.A, Zheng, J.C (2001) Ion-induced nitridation of GaAs(1 0 0) surface. Applied Surface Science, 174. 275-282 doi:10.1016/s0169-4332(01)00190-8
 
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