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Inagaki, Takanori, Hashizume, Tamotsu, Hasegawa, Hideki (2003) Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure. Applied Surface Science, 216. 519-525 doi:10.1016/s0169-4332(03)00482-3

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Reference TypeJournal (article/letter/editorial)
TitleEffects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure
JournalApplied Surface Science
AuthorsInagaki, TakanoriAuthor
Hashizume, TamotsuAuthor
Hasegawa, HidekiAuthor
Year2003 (June)Volume216
PublisherElsevier BV
DOIdoi:10.1016/s0169-4332(03)00482-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9905330Long-form Identifiermindat:1:5:9905330:1
GUID0
Full ReferenceInagaki, Takanori, Hashizume, Tamotsu, Hasegawa, Hideki (2003) Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure. Applied Surface Science, 216. 519-525 doi:10.1016/s0169-4332(03)00482-3
Plain TextInagaki, Takanori, Hashizume, Tamotsu, Hasegawa, Hideki (2003) Effects of surface processing on 2DEG current transport at AlGaN/GaN interface studied by gateless HFET structure. Applied Surface Science, 216. 519-525 doi:10.1016/s0169-4332(03)00482-3
In(n.d.) Applied Surface Science Vol. 216. Elsevier BV

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Oyama, Susumu, Hashizume, Tamotsu, Hasegawa, Hideki (2002) Mechanism of current leakage through metal/n-GaN interfaces. Applied Surface Science, 190. 322-325 doi:10.1016/s0169-4332(01)00902-3
Kotani, Junji, Hasegawa, Hideki, Hashizume, Tamotsu (2004) Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model. Applied Surface Science, 237. 213-218 doi:10.1016/j.apsusc.2004.06.152
Shiozawa, Tatsuo, Yoshida, Toshiyuki, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces. Applied Surface Science, 159. 98-103 doi:10.1016/s0169-4332(00)00068-4
Ishikawa, Fumitaro, Hasegawa, Hideki (2003) Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures. Applied Surface Science, 212. 885-889 doi:10.1016/s0169-4332(03)00022-9
Anantathanasarn, Sanguan, Ootomo, Shin-ya, Hashizume, Tamotsu, Hasegawa, Hideki (2000) Surface passivation of GaAs by ultra-thin cubic GaN layer. Applied Surface Science, 159. 456-461 doi:10.1016/s0169-4332(00)00077-5
Takahashi, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki (1998) Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer. Applied Surface Science, 123. 615-618 doi:10.1016/s0169-4332(97)00577-1
Kudoh, Takashi, Okada, Hiroshi, Hashizume, Tamotsu, Hasegawa, Hideki (1997) Controlled formation of metal-semiconductor interface to 2DEG layer by in-situ electrochemical process and its application to in-plane gated electron waveguide devices. Applied Surface Science, 117. 342-346 doi:10.1016/s0169-4332(97)80105-5
Hasegawa, Hideki (2003) III–V nanoelectronics and related surface/interface issues. Applied Surface Science, 212. 311-318 doi:10.1016/s0169-4332(03)00089-8
Jin, Zhi, Hashizume, Tamotsu, Hasegawa, Hideki (2002) Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride. Applied Surface Science, 190. 361-365 doi:10.1016/s0169-4332(01)00853-4
Anantathanasarn, Sanguan, Hasegawa, Hideki (2003) Pinning-free GaAs MIS structures with Si interface control layers formed on (4 × 6) reconstructed (0 0 1) surface. Applied Surface Science, 216. 275-282 doi:10.1016/s0169-4332(03)00383-0
Hashizume, Tamotsu, Ikeya, Kengo, Mutoh, Morimichi, Hasegawa, Hideki (1998) Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation. Applied Surface Science, 123. 599-602 doi:10.1016/s0169-4332(97)00576-x
 
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