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Sonoda, Tsutomu, Nakao, Setsuo, Ikeyama, Masami (2012) Preparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ac06

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets
JournalJapanese Journal of Applied Physics
AuthorsSonoda, TsutomuAuthor
Nakao, SetsuoAuthor
Ikeyama, MasamiAuthor
Year2012 (January 1)Volume51
Issue1
PublisherJapan Society of Applied Physics
DOIdoi:10.7567/jjap.51.01ac06Search in ResearchGate
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Mindat Ref. ID15041608Long-form Identifiermindat:1:5:15041608:3
GUID0
Full ReferenceSonoda, Tsutomu, Nakao, Setsuo, Ikeyama, Masami (2012) Preparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ac06
Plain TextSonoda, Tsutomu, Nakao, Setsuo, Ikeyama, Masami (2012) Preparation of MAX-Phase-Containing Ti–Si–C Thin Films by Magnetron Sputtering Using Elemental Targets. Japanese Journal of Applied Physics, 51 (1) 1 doi:10.7567/jjap.51.01ac06
In(2012, January) Japanese Journal of Applied Physics Vol. 51 (1) Japan Society of Applied Physics


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