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Kholopkin, A.I., Lyakhov, M.N., Pankratenko, D.A., Simonov, V.V., Vyatkin, A.F. (1991) Ion projection lithography process on dry resist. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 902-904 doi:10.1016/0168-583x(91)96304-4

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Reference TypeJournal (article/letter/editorial)
TitleIon projection lithography process on dry resist
JournalNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
AuthorsKholopkin, A.I.Author
Lyakhov, M.N.Author
Pankratenko, D.A.Author
Simonov, V.V.Author
Vyatkin, A.F.Author
Year1991 (April)Volume55
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0168-583x(91)96304-4Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5596578Long-form Identifiermindat:1:5:5596578:3
GUID0
Full ReferenceKholopkin, A.I., Lyakhov, M.N., Pankratenko, D.A., Simonov, V.V., Vyatkin, A.F. (1991) Ion projection lithography process on dry resist. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 902-904 doi:10.1016/0168-583x(91)96304-4
Plain TextKholopkin, A.I., Lyakhov, M.N., Pankratenko, D.A., Simonov, V.V., Vyatkin, A.F. (1991) Ion projection lithography process on dry resist. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 902-904 doi:10.1016/0168-583x(91)96304-4
In(1991, April) Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Vol. 55 (1) Elsevier BV

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Vyatkin, A.F., Simonov, V.V., Kholopkin, A.I. (1991) Development of ion implantation equipment in the USSR. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 386-392 doi:10.1016/0168-583x(91)96199-u
Buravlyov, A.V., Vyatkin, A.F., Egorov, V.K., Kireiko, V.V., Zuev, A.P. (1991) Some properties of amorphous silicon produced by helium ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 642-646 doi:10.1016/0168-583x(91)96249-k
Gorbatov, Yu.B., Vyatkin, A.F., Zinenko, V.I. (1991) A low-energy fast-atom beam source. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 328-330 doi:10.1016/0168-583x(91)96187-p
Starkov, V.V., Hemment, P.L.F., Vyatkin, A.F. (1991) Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 701-704 doi:10.1016/0168-583x(91)96261-i
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96122-2
Freeman, J.H. (1991) Special invited talk: Ion beams in retrospect. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96124-4
Stephens, K.G. (1991) Editorial. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). doi:10.1016/0168-583x(91)96123-3
Brown, D.A., Sferlazzo, P., O'Hanlon, J.F. (1991) Possible mechanisms for particle transport in ion implanters. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 348-354 doi:10.1016/0168-583x(91)96192-n
(1991) Author index. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 55 (1). 905-920 doi:10.1016/0168-583x(91)96305-5
(1991) Editorial Board. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 62 (1). doi:10.1016/0168-583x(91)95918-4
Vyatkin, A.F., Buravlev, A.V., Zuev, A.P. (1991) Point defect induced solid phase epitaxial growth and amorphisation of silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 431-433 doi:10.1016/0168-583x(91)95253-a
 
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