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Chang, Shao-Hui, Liu, Xue-Chao, Huang, Wei, Xiong, Ze, Yang, Jian-Hua, Shi, Er-Wei (2012) Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing. Chinese Physics B, 21. 96801pp. doi:10.1088/1674-1056/21/9/096801

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Reference TypeJournal (article/letter/editorial)
TitleFabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing
JournalChinese Physics B
AuthorsChang, Shao-HuiAuthor
Liu, Xue-ChaoAuthor
Huang, WeiAuthor
Xiong, ZeAuthor
Yang, Jian-HuaAuthor
Shi, Er-WeiAuthor
Year2012 (September)Volume21
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/21/9/096801Search in ResearchGate
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Mindat Ref. ID6002898Long-form Identifiermindat:1:5:6002898:9
GUID0
Full ReferenceChang, Shao-Hui, Liu, Xue-Chao, Huang, Wei, Xiong, Ze, Yang, Jian-Hua, Shi, Er-Wei (2012) Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing. Chinese Physics B, 21. 96801pp. doi:10.1088/1674-1056/21/9/096801
Plain TextChang, Shao-Hui, Liu, Xue-Chao, Huang, Wei, Xiong, Ze, Yang, Jian-Hua, Shi, Er-Wei (2012) Fabrication of Ti ohmic contact to n-type 6H-SiC without high-temperature annealing. Chinese Physics B, 21. 96801pp. doi:10.1088/1674-1056/21/9/096801
In(n.d.) Chinese Physics B Vol. 21. IOP Publishing

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