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Zhou, Tian-Yu, Liu, Xue-Chao, Huang, Wei, Dai, Chong-Chong, Zheng, Yan-Qing, Shi, Er-Wei (2015) Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches. Chinese Physics B, 24. 44209pp. doi:10.1088/1674-1056/24/4/044209

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Reference TypeJournal (article/letter/editorial)
TitleApplication of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches
JournalChinese Physics B
AuthorsZhou, Tian-YuAuthor
Liu, Xue-ChaoAuthor
Huang, WeiAuthor
Dai, Chong-ChongAuthor
Zheng, Yan-QingAuthor
Shi, Er-WeiAuthor
Year2015 (April)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/4/044209Search in ResearchGate
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Mindat Ref. ID6006064Long-form Identifiermindat:1:5:6006064:8
GUID0
Full ReferenceZhou, Tian-Yu, Liu, Xue-Chao, Huang, Wei, Dai, Chong-Chong, Zheng, Yan-Qing, Shi, Er-Wei (2015) Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches. Chinese Physics B, 24. 44209pp. doi:10.1088/1674-1056/24/4/044209
Plain TextZhou, Tian-Yu, Liu, Xue-Chao, Huang, Wei, Dai, Chong-Chong, Zheng, Yan-Qing, Shi, Er-Wei (2015) Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches. Chinese Physics B, 24. 44209pp. doi:10.1088/1674-1056/24/4/044209
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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