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Edon, V., Hugon, M.C., Agius, B., Miotti, L., Radtke, C., Tatsch, F., Ganem, J.J., Trimaille, I., Baumvol, I.J.R. (2006) Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si. Applied Physics A, 83. 289-293 doi:10.1007/s00339-006-3484-5

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Reference TypeJournal (article/letter/editorial)
TitleEffects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si
JournalApplied Physics A
AuthorsEdon, V.Author
Hugon, M.C.Author
Agius, B.Author
Miotti, L.Author
Radtke, C.Author
Tatsch, F.Author
Ganem, J.J.Author
Trimaille, I.Author
Baumvol, I.J.R.Author
Year2006 (May)Volume83
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s00339-006-3484-5Search in ResearchGate
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Mindat Ref. ID6012344Long-form Identifiermindat:1:5:6012344:2
GUID0
Full ReferenceEdon, V., Hugon, M.C., Agius, B., Miotti, L., Radtke, C., Tatsch, F., Ganem, J.J., Trimaille, I., Baumvol, I.J.R. (2006) Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si. Applied Physics A, 83. 289-293 doi:10.1007/s00339-006-3484-5
Plain TextEdon, V., Hugon, M.C., Agius, B., Miotti, L., Radtke, C., Tatsch, F., Ganem, J.J., Trimaille, I., Baumvol, I.J.R. (2006) Effects of sputter deposition parameters and post-deposition annealing on the electrical characteristics of LaAlO3 dielectric films on Si. Applied Physics A, 83. 289-293 doi:10.1007/s00339-006-3484-5
In(2006) Applied Physics A Vol. 83. Springer Science and Business Media LLC

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Miotti, L., Bastos, K. P., Driemeier, C., Edon, V., Hugon, M. C., Agius, B., Baumvol, I. J. R. (2005) Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si. Applied Physics Letters, 87 (2). 22901pp. doi:10.1063/1.1989447
Miotti, L., Tatsch, F., Driemeier, C., Bastos, K.P., Edon, V., Hugon, M.C., Agius, B., Baumvol, I.J.R., Krug, C. (2006) Composition, stability and oxygen transport in lanthanum and hafnium aluminates thin films on Si. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 249 (1). 366-369 doi:10.1016/j.nimb.2006.04.030
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Miotti, L., Pezzi, R.P., Copel, M., Baumvol, I.J.R. (2008) Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 266 (8). 1162-1165 doi:10.1016/j.nimb.2008.01.042
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Radtke, C, Baumvol, I.J.R, Stedile, F.C, Vickridge, I.C, Trimaille, I, Ganem, J.-J, Rigo, S (2003) Thermal growth of SiO2 on SiC investigated by isotopic tracing and subnanometric depth profiling. Applied Surface Science, 212. 570-574 doi:10.1016/s0169-4332(03)00403-3
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