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Ogawa, S., Yoshida, T., Kouzaki, T., Okuda, S., Tsukamoto, K. (1990) Thermal instability of the TiSi2/Si structure: Impurity effects. Applied Surface Science, 41. 290-295 doi:10.1016/0169-4332(89)90073-1

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Reference TypeJournal (article/letter/editorial)
TitleThermal instability of the TiSi2/Si structure: Impurity effects
JournalApplied Surface Science
AuthorsOgawa, S.Author
Yoshida, T.Author
Kouzaki, T.Author
Okuda, S.Author
Tsukamoto, K.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90073-1Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894943Long-form Identifiermindat:1:5:9894943:6
GUID0
Full ReferenceOgawa, S., Yoshida, T., Kouzaki, T., Okuda, S., Tsukamoto, K. (1990) Thermal instability of the TiSi2/Si structure: Impurity effects. Applied Surface Science, 41. 290-295 doi:10.1016/0169-4332(89)90073-1
Plain TextOgawa, S., Yoshida, T., Kouzaki, T., Okuda, S., Tsukamoto, K. (1990) Thermal instability of the TiSi2/Si structure: Impurity effects. Applied Surface Science, 41. 290-295 doi:10.1016/0169-4332(89)90073-1
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Fujimura, Norifumi, Ito, Taichiro (1990) TiSi2 formation at the Ti-rich TiNx/Si interface. Applied Surface Science, 41. 272-276 doi:10.1016/0169-4332(89)90069-x
Okumura, H., Miki, K., Sakamoto, K., Sakamoto, T., Endo, K., Yoshida, S. (1990) Raman scattering and photoluminescence characterization of Ge/Si strained-layer superlattices grown by phase-locked epitaxy. Applied Surface Science, 41. 548-552 doi:10.1016/0169-4332(89)90120-7
Ichimiya, A., Kohmoto, S., Fujii, T., Horio, Y. (1990) Rheed intensity analysis of Si(111)√3Γ—βˆš3-Ag structure. Applied Surface Science, 41. 82-87 doi:10.1016/0169-4332(89)90037-8
Kono, S., Enta, Y., Abukawa, T., Kinoshita, T., Sakamoto, T. (1990) Photoelectron spectroscopy and photoelectron diffraction studies of Si(001)2Γ—1-K and -Cs surfaces. Applied Surface Science, 41. 75-81 doi:10.1016/0169-4332(89)90036-6
Urano, T., Kaburagi, M., Hongo, S., Kanaji, T. (1990) LEED I-V curve analysis for the structure of iron films on Si(111) surfaces. Applied Surface Science, 41. 103-106 doi:10.1016/0169-4332(89)90040-8
Zaima, S., Maruyama, T., Yasuda, Y. (1990) Piezoresistance in n-channel inversion layers of Si MOSFET's. Applied Surface Science, 41. 433-438 doi:10.1016/0169-4332(89)90098-6
Aoyama, T., Sugii, T., Ito, T. (1990) Determination of band line-up in Ξ²-SiC/Si heterojunction for Si-HBT's. Applied Surface Science, 41. 584-586 doi:10.1016/0169-4332(89)90126-8
Igarashi, Y., Yamaji, T., Nishikawa, S., Ohno, S. (1990) Influence of annealing ambients on ZrSi2 formation. Applied Surface Science, 41. 282-285 doi:10.1016/0169-4332(89)90071-8
Yasuda, Y., Zaima, S., Kaida, T., Koide, Y. (1990) Formation of Si-SiO2 interfaces at low temperatures using microwave-excited plasma. Applied Surface Science, 41. 429-432 doi:10.1016/0169-4332(89)90097-4
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Fujitani, Hideaki, Asano, Setsuro (1990) Electronic structure of Si/disilicide interfaces. Applied Surface Science, 41. 164-168 doi:10.1016/0169-4332(89)90050-0
 
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