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Barriére, A.S., Couturier, G., Guegan, H., Séguelong, T., Thabti, A., Alnot, P., Chazelas, J. (1990) Interface GaAs - gallium fluoride thin film grown by fluorination. Applied Surface Science, 41. 383-389 doi:10.1016/0169-4332(89)90088-3

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Reference TypeJournal (article/letter/editorial)
TitleInterface GaAs - gallium fluoride thin film grown by fluorination
JournalApplied Surface Science
AuthorsBarriére, A.S.Author
Couturier, G.Author
Guegan, H.Author
Séguelong, T.Author
Thabti, A.Author
Alnot, P.Author
Chazelas, J.Author
Year1990 (January)Volume41
PublisherElsevier BV
DOIdoi:10.1016/0169-4332(89)90088-3Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9894958Long-form Identifiermindat:1:5:9894958:8
GUID0
Full ReferenceBarriére, A.S., Couturier, G., Guegan, H., Séguelong, T., Thabti, A., Alnot, P., Chazelas, J. (1990) Interface GaAs - gallium fluoride thin film grown by fluorination. Applied Surface Science, 41. 383-389 doi:10.1016/0169-4332(89)90088-3
Plain TextBarriére, A.S., Couturier, G., Guegan, H., Séguelong, T., Thabti, A., Alnot, P., Chazelas, J. (1990) Interface GaAs - gallium fluoride thin film grown by fluorination. Applied Surface Science, 41. 383-389 doi:10.1016/0169-4332(89)90088-3
In(n.d.) Applied Surface Science Vol. 41. Elsevier BV

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Yamada Maruo, Y., Oshima, M., Waho, T., Kawamura, T., Maeyama, S., Miyahara, T. (1990) Photoemission studies of bonding properties at the MBE-grown CaF2/GaAs interface. Applied Surface Science, 41. 647-653 doi:10.1016/0169-4332(89)90137-2
De Figueiredo, S.K., Ferraz, A.C. (1990) Interface geometry of (GaAs)n(InAs)n and (GaP)n(InP)n ultra-thin superlattices. Applied Surface Science, 41. 509-511 doi:10.1016/0169-4332(89)90111-6
Barrière, A.S., Couturier, G., Gevers, G., Guegan, H., Tournay, V., Bertault, D., Desbat, B., Tressaud, A., Alnot, P. (1990) Fluorine-gas treatment of InP(100): physico-chemical characterization of the obtained components. Surface Science, 239 (1). 135-142 doi:10.1016/0039-6028(90)90625-i
Takeuchi, Takayuki, Maezawa, Chikako, Nomura, Takashi, Ishikawa, Kenji, Miyao, Masahiro, Hagino, Minoru (1990) Raman study of strain distribution in interface region of GaAs/GaP heteroepitaxial layers grown by MBE. Applied Surface Science, 41. 530-533 doi:10.1016/0169-4332(89)90116-5
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Hongo, S., Kataoka, Y., Urano, T., Kanaji, T. (1990) Evaluation by resonant light scattering of ZnTe epitaxial layer deposited on GaAs. Applied Surface Science, 41. 522-525 doi:10.1016/0169-4332(89)90114-1
 
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