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Mason, R.E., Coleman, P.G. (2006) A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252. 3228-3230 doi:10.1016/j.apsusc.2005.08.079

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Reference TypeJournal (article/letter/editorial)
TitleA technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon
JournalApplied Surface Science
AuthorsMason, R.E.Author
Coleman, P.G.Author
Year2006 (February)Volume252
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2005.08.079Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID9909249Long-form Identifiermindat:1:5:9909249:8
GUID0
Full ReferenceMason, R.E., Coleman, P.G. (2006) A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252. 3228-3230 doi:10.1016/j.apsusc.2005.08.079
Plain TextMason, R.E., Coleman, P.G. (2006) A technique for positron spectroscopy of monovacancies formed by low-temperature ion implantation of silicon. Applied Surface Science, 252. 3228-3230 doi:10.1016/j.apsusc.2005.08.079
In(n.d.) Applied Surface Science Vol. 252. Elsevier BV

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Coleman, P.G., Burrows, C.P., Mason, R.E. (2006) Real-time full spectrum fitting of beam-based Doppler broadening data. Applied Surface Science, 252. 3183-3187 doi:10.1016/j.apsusc.2005.08.044
Coleman, P.G. (2006) Positron beam studies of solids and surfaces: A summary. Applied Surface Science, 252. 3372-3374 doi:10.1016/j.apsusc.2005.08.085
Abdulmalik, D.A., Coleman, P.G., Al-Qaradawi, I.Y. (2006) Self-implantation of Cz-Si: Clustering and annealing of defects. Applied Surface Science, 252. 3209-3214 doi:10.1016/j.apsusc.2005.08.072
Knights, A.P., Dudeck, K.J., Walters, W.D., Coleman, P.G. (2008) Modification of silicon waveguide structures using ion implantation induced defects. Applied Surface Science, 255. 75-77 doi:10.1016/j.apsusc.2008.05.167
Anwand, W, Brauer, G, Coleman, P.G, Voelskow, M, Skorupa, W (1999) Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering. Applied Surface Science, 149. 148-150 doi:10.1016/s0169-4332(99)00191-9
Coleman, P.G, Knights, A.P (1999) Enhancement of depth sensitivity in slow positron implantation spectroscopy of Si. Applied Surface Science, 149. 82-86 doi:10.1016/s0169-4332(99)00177-4
Coleman, P.G., Bloss, E., Setzler, S., LaShell, S., Davies, Gordon, Sawyer, W.D. (1995) Slow positron implantation spectroscopy of edge-defined film-fed growth silicon. Applied Surface Science, 85. 276-279 doi:10.1016/0169-4332(94)00343-2
Desgardin, P., Barthe, M.-F., Ntsoenzok, E., Liu, C.-L. (2006) Modifications of He implantation induced cavities in silicon by MeV silicon implantation. Applied Surface Science, 252. 3231-3236 doi:10.1016/j.apsusc.2005.08.080
Kar, Samares (2006) Study of silicon–organic interfaces by admittance spectroscopy. Applied Surface Science, 252. 3961-3967 doi:10.1016/j.apsusc.2005.09.029
Sun, Rong, Xu, Tao, Zhang, Jing-wei, Xue, Qun-ji (2006) The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation. Applied Surface Science, 252. 4236-4243 doi:10.1016/j.apsusc.2005.06.037
Coleman, P.G., Potter, N.R. (2008) Back to the future: Polarised positron beams. Applied Surface Science, 255. 101-103 doi:10.1016/j.apsusc.2008.05.173
 
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