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Esakky, Papanasam, Kailath, Binsu J (2017) Improvement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing. Applied Surface Science, 413. 66-71 doi:10.1016/j.apsusc.2017.04.039

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Reference TypeJournal (article/letter/editorial)
TitleImprovement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing
JournalApplied Surface Science
AuthorsEsakky, PapanasamAuthor
Kailath, Binsu JAuthor
Year2017 (August)Volume413
PublisherElsevier BV
DOIdoi:10.1016/j.apsusc.2017.04.039Search in ResearchGate
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Mindat Ref. ID9930959Long-form Identifiermindat:1:5:9930959:2
GUID0
Full ReferenceEsakky, Papanasam, Kailath, Binsu J (2017) Improvement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing. Applied Surface Science, 413. 66-71 doi:10.1016/j.apsusc.2017.04.039
Plain TextEsakky, Papanasam, Kailath, Binsu J (2017) Improvement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing. Applied Surface Science, 413. 66-71 doi:10.1016/j.apsusc.2017.04.039
In(n.d.) Applied Surface Science Vol. 413. Elsevier BV

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