Kurimoto, Hirofumi, Shibata, Kaoru, Kimura, Chiharu, Aoki, Hidemitsu, Sugino, Takashi (2006) Thermal oxidation temperature dependence of 4H-SiC MOS interface. Applied Surface Science, 253. 2416-2420 doi:10.1016/j.apsusc.2006.04.054
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Thermal oxidation temperature dependence of 4H-SiC MOS interface | ||
| Journal | Applied Surface Science | ||
| Authors | Kurimoto, Hirofumi | Author | |
| Shibata, Kaoru | Author | ||
| Kimura, Chiharu | Author | ||
| Aoki, Hidemitsu | Author | ||
| Sugino, Takashi | Author | ||
| Year | 2006 (December) | Volume | 253 |
| Publisher | Elsevier BV | ||
| DOI | doi:10.1016/j.apsusc.2006.04.054Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 9910536 | Long-form Identifier | mindat:1:5:9910536:7 |
| GUID | 0 | ||
| Full Reference | Kurimoto, Hirofumi, Shibata, Kaoru, Kimura, Chiharu, Aoki, Hidemitsu, Sugino, Takashi (2006) Thermal oxidation temperature dependence of 4H-SiC MOS interface. Applied Surface Science, 253. 2416-2420 doi:10.1016/j.apsusc.2006.04.054 | ||
| Plain Text | Kurimoto, Hirofumi, Shibata, Kaoru, Kimura, Chiharu, Aoki, Hidemitsu, Sugino, Takashi (2006) Thermal oxidation temperature dependence of 4H-SiC MOS interface. Applied Surface Science, 253. 2416-2420 doi:10.1016/j.apsusc.2006.04.054 | ||
| In | (n.d.) Applied Surface Science Vol. 253. Elsevier BV | ||
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